MT48H8M32LFB5-10 TR Micron Technology Inc, MT48H8M32LFB5-10 TR Datasheet - Page 66

• Manufacturer Part Number: MT48H8M32LFB5-10 TR
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-10 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 44: Read – Full-page Burst
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
COMMAND
A0-A9, A11
BA0, BA1
DQM 0-3
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t RCD
t CL
Notes: 1. For this example, CL = 2.
T1
NOP
t CH
2. A9 and A11 = “Don’t Care.”
3. Page left open; no
t CMS
t CK
COLUMN m 2
See Table 15, Electrical Characteristics and Recommended AC Operating Conditions, on
page 48.
T2
BANK
READ
t CMH
CAS Latency
T3
NOP
t LZ
t AC
1
t
RP.
T4
Dout m
NOP
t OH
t AC
66
512 locations within same row
Full-page burst does not self-terminate.
Can use BURST TERMINATE command.
D
T5
OUT
NOP
t OH
m+1
Full page completed
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t AC
D
T6
OUT
NOP
t OH
t AC
m+2
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256Mb: x32 Mobile SDRAM
Tn + 1
D
NOP
OUT
t OH
m-1
t AC
©2003 Micron Technology, Inc. All rights reserved.
BURST TERM
Tn + 2
3
D
Timing Diagrams
OUT
t OH
m
t AC
Tn + 3
D
OUT
NOP
DON’T CARE
UNDEFINED
t OH
m+1
t HZ
Tn + 4
NOP