MT48H8M32LFB5-10 TR Micron Technology Inc, MT48H8M32LFB5-10 TR Datasheet - Page 26

• Manufacturer Part Number: MT48H8M32LFB5-10 TR
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-10 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 11: Random READ Accesses
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
Note:
Data from any READ burst may be truncated with a subsequent WRITE command, and
data from a fixed-length READ burst may be immediately followed by data from a
WRITE command (subject to bus turnaround limitations). The WRITE burst may be
Each READ command may be to either bank. DQM is LOW.
COMMAND
COMMAND
NOTE: Each READ command may be to either bank. DQM is LOW.
COMMAND
ADDRESS
ADDRESS
ADDRESS
CLK
CLK
DQ
DQ
CLK
DQ
CAS Latency = 1
T0
BANK,
T0
BANK,
COL n
COL n
READ
READ
T0
BANK,
COL n
READ
CAS Latency = 2
CAS Latency = 3
T1
T1
READ
BANK,
BANK,
COL a
READ
COL a
26
T1
BANK,
READ
COL a
D
OUT
n
T2
T2
BANK,
COL x
T2
READ
READ
BANK,
BANK,
COL x
COL x
READ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
D
OUT
n
OUT
a
T3
T3
T3
COL m
BANK,
BANK,
COL m
READ
READ
BANK,
COL m
READ
D
D
D
OUT
OUT
x
OUT
a
n
256Mb: x32 Mobile SDRAM
T4
T4
T4
NOP
NOP
NOP
D
D
D
OUT
m
OUT
OUT
x
a
©2003 Micron Technology, Inc. All rights reserved.
T5
T5
NOP
NOP
D
D
OUT
m
OUT
x
DON’T CARE
T6
NOP
Operation
D
OUT
m