MT48H8M32LFB5-10 TR Micron Technology Inc, MT48H8M32LFB5-10 TR Datasheet - Page 56

• Manufacturer Part Number: MT48H8M32LFB5-10 TR
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-10 TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Timing Diagrams
Figure 34: Initialize and Load Mode Register
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
COMMAND
A0-A9, A11
DQM 0-3
BA0, BA1
A10
CKE
CLK
DQ
5
Power-up:
V
CLK stable
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T = 100µs
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CMS
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CKS
Notes: 1. The two AUTO REFRESH commands at T9 and T19 may be applied before either LOAD
T0
NOP
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High-Z
CMH
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CKH
2. PRE = PRECHARGE command, LMR = LOAD MODE REGISTER command, AR = AUTO
3. Optional REFRESH command.
4. The load mode register for both MR/EMR and 2 AUTO REFRESH commands can be in any
5. Device timing is -10 with 100 MHz clock.
MODE REGISTER (LMR) command.
REFRESH command, ACT = ACTIVE command, RA = Row Address, BA = Bank Address.
order. However, all must occur prior to an ACTIVE command.
See Table 15, Electrical Characteristics and Recommended AC Operating Conditions, on
page 48.
ALL BANKS
t
AS
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T1
t AH
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Load Extended
Mode Register
t AS
t AS t AH
BA0 = L,
BA1 = H
LMR 4
CODE
CODE
T3
t AH
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MRD
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Load Mode
Register
BA0 = L,
BA1 = L
56
CODE
CODE
LMR 4
T5
t
1,2
MRD
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ALL BANKS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
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PRE 3
T7
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AH
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256Mb: x32 Mobile SDRAM
AR 4
T9
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©2003 Micron Technology, Inc. All rights reserved.
T19
AR 4
Timing Diagrams
t
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DON’T CARE
T29
ACT 4
RA
RA
BA