HYB18T1G160BF-5 Qimonda, HYB18T1G160BF-5 Datasheet - Page 42

IC DDR2 SDRAM 1GBIT 84TFBGA

HYB18T1G160BF-5

Manufacturer Part Number
HYB18T1G160BF-5
Description
IC DDR2 SDRAM 1GBIT 84TFBGA
Manufacturer
Qimonda
Datasheet

Specifications of HYB18T1G160BF-5

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (64M x 16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 95°C
Package / Case
84-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
675-1018-2
6
This chapter describes the current measurement specifications and conditions.
Rev. 1.3, 2007-07
03062006-ZNH8-HURV
Parameter
Operating Current - One bank Active - Precharge
t
Address and control inputs are switching; Databus inputs are switching.
Operating Current - One bank Active - Read - Precharge
I
CKE is HIGH, CS is HIGH between valid commands. Address and control inputs are switching; Databus
inputs are switching.
Precharge Power-Down Current
All banks idle; CKE is LOW;
floating
Precharge Standby Current
All banks idle; CS is HIGH; CKE is HIGH;
Data bus inputs are switching
Precharge Quiet Standby Current
All banks idle; CS is HIGH; CKE is HIGH;
Data bus inputs are floating.
Active Power-Down Current
All banks open;
are floating. MRS A12 bit is set to “0” (Fast Power-down Exit).
Active Power-Down Current
All banks open;
are floating. MRS A12 bit is set to 1 (Slow Power-down Exit);
Active Standby Current
All banks open;
commands. Address inputs are switching; Data Bus inputs are switching;
Operating Current
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CL
t
switching; Data Bus inputs are switching;
Operating Current
Burst Write: All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CL
t
switching; Data Bus inputs are switching;
Burst Refresh Current
t
commands, Other control and address inputs are switching, Data bus inputs are switching.
Distributed Refresh Current
t
commands, Other control and address inputs are switching, Data bus inputs are switching.
CK
OUT
RAS
RAS
CK
CK
=
=
=
=
=
= 0 mA, BL = 4,
t
t
t
CK(IDD)
CK(IDD)
CK(IDD)
t
t
RAS.MAX.(IDD)
RAS.MAX(IDD)
.
,
, Refresh command every
, Refresh command every
t
RC
t
t
t
=
CK
CK
CK
,
,
t
t
t
RC(IDD)
=
=
=
RP
RP
Currents Measurement Conditions
t
t
t
t
CK
CK(IDD)
CK(IDD)
CK(IDD)
=
=
t
=
t
RP(IDD)
,
RP(IDD)
t
t
RAS
CK(IDD)
, CKE is LOW; Other control and address inputs are stable; Data bus inputs
, CKE is LOW; Other control and address inputs are stable, Data bus inputs
;
t
CK
t
.
RAS
; CKE is HIGH, CS is HIGH between valid commands. Address inputs are
=
; CKE is HIGH, CS is HIGH between valid commands. Address inputs are
=
t
,
t
RAS.MIN(IDD)
=
t
CK(IDD)
RC
t
RAS.MAX(IDD)
=
t
t
REFI
RFC
t
;Other control and address inputs are stable; Data bus inputs are
RC(IDD)
I
t
t
OUT
CK
CK
=
= 7.8 µs interval, CKE is LOW and CS is HIGH between valid
, CKE is HIGH, CS is HIGH between valid commands.
t
=
=
RFC(IDD)
,
= 0 mA.
,
t
t
t
CK(IDD)
CK(IDD)
RAS
t
RP
=
=
interval, CKE is HIGH, CS is HIGH between valid
t
; Other control and address inputs are switching,
; Other control and address inputs are stable,
t
RP(IDD)
RAS.MIN(IDD)
; CKE is HIGH, CS is HIGH between valid
42
,
t
RCD
=
t
RCD(IDD)
(IDD)
(IDD)
, AL = 0, CL = CL(IDD);
1-Gbit Double-Data-Rate-Two SDRAM
;
;
t
t
CK
CK
HY[B/I]18T1G[40/80/16]0B[C/F](L/V)
=
=
t
t
CK(IDD)
CK(IDD)
I
DD
Measurement Conditions
;
;
Internet Data Sheet
Symbol Note
I
I
I
I
I
I
I
I
I
I
I
I
TABLE 46
DD0
DD1
DD2P
DD2N
DD2Q
DD3P(0)
DD3P(1)
DD3N
DD4R
DD4W
DD5B
DD5D
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