LH28F320S3NS-L11 Sharp Microelectronics, LH28F320S3NS-L11 Datasheet - Page 49

• Manufacturer Part Number: LH28F320S3NS-L11
• Description: IC FLASH 32MBIT 110NS 56SSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F320S3NS-L11

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 56-SSOP
• Lead Free Status / RoHS Status: Contains lead / Request inventory verification
• Other names: 425-1844; LHF32K01

sharp
NOTES:
1. Typical values measured at T
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Sampled but not 100% tested.
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHQV1
EHQV1
WHQV1
EHQV1
WHQV2
EHQV2
WHQV3
EHQV3
WHQV4
EHQV4
WHRH1
EHRH1
WHRH2
EHRH2
Sym.
set. Subject to change based on device characterization.
Word/Byte Write Time
(using W/B write, in word mode)
Word/Byte Write Time
(using W/B write, in byte mode)
Word/Byte Write Time
(using multi word/byte write)
Block Write Time
(using W/B write, in word mode)
Block Write Time
(using W/B write, in byte mode)
Block Write Time
(using multi word/byte write)
Block Erase Time
Full Chip Erase Time
Set Block Lock-Bit Time
Clear Block Lock-Bits Time
Write Suspend Latency Time to Read
Erase Suspend Latency Time to Read
Parameter
A
=+25°C and nominal voltages. Assumes corresponding block lock-bits are not
V
CC
=3.3V±0.3V, T
LHF32K01
Notes
2
2
2
2
2
2
2
2
2
A
=0°C to +70°C
Typ.
21.75
19.51
21.75
5.66
0.72
1.28
0.36
0.55
35.2
0.55
15.2
V
7.1
PP
(1)
=3.0V-3.6V
Max.
16.5
21.1
250
250
250
640
250
8.2
4.1
10
10
10
Typ.
12.95
12.95
12.95
0.43
0.85
0.18
0.41
26.3
0.41
12.3
V
2.7
6.6
PP
(1)
=4.5V-5.5V
Max.
10.9
17.2
180
180
180
640
180
4.8
9.3
10
10
2
Rev. 1.55
Unit
µs
µs
µs
µs
µs
µs
s
s
s
s
s
s
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