LH28F320S3NS-L11 Sharp Microelectronics, LH28F320S3NS-L11 Datasheet - Page 43

• Manufacturer Part Number: LH28F320S3NS-L11
• Description: IC FLASH 32MBIT 110NS 56SSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F320S3NS-L11

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 56-SSOP
• Lead Free Status / RoHS Status: Contains lead / Request inventory verification
• Other names: 425-1844; LHF32K01

sharp
6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS
NOTE:
See 3.3V V
NOTES:
1. Read timing characteristics during block erase, full chip erase, (multi) wrod/byte write and block lock-bit
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A
4. V
5. See Ordering Information for device speeds (valid operational combinations).
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVSL
AVAV
PHWL
ELWL
WLWH
SHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVSL
Sym.
Sym.
configuration operations are the same as during read-only operations. Refer to AC Characteristics for read-only
operations.
configuration.
block lock-bit configuration success (SR.1/3/4/5=0).
PP
should be held at V
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
WP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to STS Going Low
Write Recovery before Read
V
WP# V
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
WP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to STS Going Low
Write Recovery before Read
V
WP# V
CC
PP
PP
PP
PP
WE#-Controlled Writes for notes 1 through 5.
Setup to WE# Going High
Hold from Valid SRD, STS High Z
Setup to WE# Going High
Hold from Valid SRD, STS High Z
IH
IH
IH
IH
Setup to WE# Going High
Hold from Valid SRD, STS High Z
Setup to WE# Going High
Hold from Valid SRD, STS High Z
PPH1/2/3
IN
and D
Parameter
Parameter
Versions
Versions
until determination of block erase, full chip erase, (multi) word/byte write or
IN
V
V
for block erase, full chip erase, (multi) word/byte write or block lock-bit
CC
CC
(5)
(5)
=3.3V±0.3V, T
=2.7V-3.6V, T
LHF32K01
A
A
=0°C to +70°C
=0°C to +70°C
(1)
Notes
Notes
2,4
2,4
2,4
2,4
2
2
2
3
3
2
2
2
3
3
LH28F320S3-L140
LH28F320S3-L110
Min.
Min.
140
100
100
110
100
100
10
55
50
50
10
30
10
55
50
50
10
30
1
5
5
0
0
0
1
5
5
0
0
0
Max.
Max.
100
100
Rev. 1.55
Unit
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
40