lh28f320s3 Sharp Microelectronics of the Americas, lh28f320s3 Datasheet
lh28f320s3
Manufacturer Part Number
lh28f320s3
Description
Eprom Datasheet Reference
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LH28F320S3.pdf
(2 pages)
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P
LH28F320S3 32M
(4M × 8/2M × 16)
Smart 3 Flash Memory
FEATURES
• Smart 3 technology
• Common flash interface (CFI)
• Scalable command set (SCS)
• High speed write performance
• High speed read performance
• Enhanced automated suspend options
• Industry-standard packaging
• Chip size packaging
• SRAM-compatible write interface
• User-configurable × 8 or × 16 operation
• High-density symmetrically-blocked architecture
• Enhanced data protection features
• Extended cycling capability
• Low Power management
• Automated write and erase
• ETOX™ V nonvolatile flash technology
• Not designed or rated as radiation hardened
This Product Information is from LH28F320S3 Preliminary Product Preview, Rev. 1.1
Copyright ©1998, Sharp Electronics Corp. All rights reserved. All tradenames are the registered property of their respective owners. Specifications are subject to change without notice.
RODUCT
– 2.7 V or 3.3 V V
– 2.7 V, 3.3 V or 5 V V
– Universal and upgradable interface
– 32 Bytes × 2 plane page buffer
– 2.7 µs byte write transfer rate
– 110/140 ns (3.3 V ±0.3 V)
– 130/160 ns (2.7 V – 3.6 V)
– Write suspend to read
– Block erase suspend to write
– Block erase suspend to read
– 56-pin SSOP
– 64-ball CSP
– Sixty-four 64K erasable blocks
– Absolute protection with V
– Flexible block locking
– Erase/write lockout during power transitions
– 100,000 block erase cycles
– 6.4 million block erase cycles/chip
– Deep power-down mode
– Automatic power savings mode
– Decreases I
– Command user interface
– Status register
I
CC
NFORMATION
in static mode
CC
PP
PP
= GND
®
DESCRIPTION
high-density, low-cost, nonvolatile, read/write storage solution for a
wide range of applications. Its symmetrically-blocked architecture,
flexible voltage and extended cycling provide for highly flexible
component suitable for resident flash arrays, SIMMs and memory
cards. Its enhanced suspend capabilities provide for an ideal solu-
tion for code and data storage applications. For secure code storage
applications, such as networking, where code is either directly exe-
cuted out of flash or downloaded to DRAM, the LH28F320S3 offers
three levels of protection: absolute protection with V
tive hardware block locking, or flexible software block locking. These
alternatives give designers ultimate control of their code security needs.
56-PIN SSOP PINOUT
56-PIN SSOP
SHARP’s LH28F320S3 Flash memory with Smart 3 technology is a
APPLICATIONS:
Digital Camera
DQ
DQ
DQ
DQ
GND
DQ
DQ
DQ
STS
DQ
CE
CE
V
V
WE
WP
PDA
A
A
A
A
A
A
A
NC
A
A
A
OE
CC
CC
•
•
12
13
14
15
20
19
18
17
16
14
15
13
12
21
0
6
7
5
4
1
1
10
11
12
13
14
15
16
17
18
19
20
21
26
27
28
2
3
4
5
6
7
8
9
22
23
24
25
Integrated Circuits
54
53
56
55
52
51
50
49
48
47
46
45
44
43
42
40
39
38
37
36
35
34
33
32
31
30
29
41
V
RP
A
A
A
GND
V
DQ
DQ
DQ
DQ
A
BYTE
NC
NC
DQ
DQ
DQ
DQ
GND
A
A
A
A
A
A
A
A
PP
9
1
3
4
5
7
CC
0
11
10
2
6
8
TOP VIEW
9
1
8
0
2
10
3
11
320S3-1
PP
at GND, selec-
Group
SMT98031
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lh28f320s3 Summary of contents
Page 1
... For secure code storage applications, such as networking, where code is either directly exe- cuted out of flash or downloaded to DRAM, the LH28F320S3 offers three levels of protection: absolute protection with V tive hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs ...
Page 2
... P I RODUCT NFORMATION 64-BALL CSP PINOUT 64-BALL CSP LH28F320S3 16M (4M × 8/2M ×16) Smart 3 Flash Memory ® STS ...