LH28F320S3NS-L11 Sharp Microelectronics, LH28F320S3NS-L11 Datasheet - Page 5

• Manufacturer Part Number: LH28F320S3NS-L11
• Description: IC FLASH 32MBIT 110NS 56SSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F320S3NS-L11

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 56-SSOP
• Lead Free Status / RoHS Status: Contains lead / Request inventory verification
• Other names: 425-1844; LHF32K01

sharp
■ Smart 3 Technology
■ Common Flash Interface (CFI)
■ Scalable Command Set (SCS)
■ High Speed Write Performance
■ High Speed Read Performance
■ Operating Temperature
■ High-Density Symmetrically-Blocked
■ Extended Cycling Capability
■ Low Power Management
SHARP’s LH28F320S3NS-L11 Flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile,
read/write storage solution for a wide range of applications. Its symmetrically-blocked architecture, flexible voltage
and extended cycling provide for highly flexible component suitable for resident flash arrays, SIMMs and memory
cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For
secure code storage applications, such as networking, where code is either directly executed out of flash or
downloaded to DRAM, the LH28F320S3NS-L11 offers three levels of protection: absolute protection with V
GND, selective hardware block locking, or flexible software block locking. These alternatives give designers
ultimate control of their code security needs.
The LH28F320S3NS-L11 is conformed to the flash Scalable Command Set (SCS) and the Common Flash Interface
(CFI) specification which enable universal and upgradable interface, enable the highest system/device data transfer
rates and minimize device and system-level implementation costs.
The LH28F320S3NS-L11 is manufactured on SHARP’s 0.4µm ETOX
standard package: the 56-Lead SSOP, ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
Architecture
2.7V or 3.3V V
2.7V, 3.3V or 5V V
Universal & Upgradable Interface
32 Bytes x 2 plane Page Buffer
2.7 µs/Byte Write Transfer Rate
110ns(3.3V±0.3V), 140ns(2.7V-3.6V)
0°C to +70°C
Sixty-four 64-Kbyte Erasable Blocks
100,000 Block Erase Cycles
6.4 Million Block Erase Cycles/Chip
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases I
CC
CC
in Static Mode
PP
32-MBIT (4MBx8/2MBx16)
Smart 3 Flash MEMORY
LH28F320S3NS-L11
LHF32K01
■ Automated Write and Erase
■ Enhanced Automated Suspend Options
■ Enhanced Data Protection Features
■ SRAM-Compatible Write Interface
■ User-Configurable x8 or x16 Operation
■ Industry-Standard Packaging
■ ETOX
■ CMOS Process
■ Not designed or rated as radiation
Technology
(P-type silicon substrate)
hardened
Command User Interface
Status Register
Write Suspend to Read
Block Erase Suspend to Write
Block Erase Suspend to Read
Absolute Protection with V
Flexible Block Locking
Erase/Write Lockout during Power
Transitions
56-Lead SSOP
TM
TM*
* V process technology. It come in industry-
V Nonvolatile Flash
PP
=GND
Rev. 1.55
PP
at
2