LH28F320S3NS-L11 Sharp Microelectronics, LH28F320S3NS-L11 Datasheet - Page 15

IC FLASH 32MBIT 110NS 56SSOP

LH28F320S3NS-L11

Manufacturer Part Number
LH28F320S3NS-L11
Description
IC FLASH 32MBIT 110NS 56SSOP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of LH28F320S3NS-L11

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4Mx8, 2Mx16)
Speed
110ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
56-SSOP
Lead Free Status / RoHS Status
Contains lead / Request inventory verification
Other names
425-1844
LHF32K01

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4.1 Read Array Command
Upon initial device power-up and after exit from deep
power-down mode, the device defaults to read array
mode. This operation is also initiated by writing the
Read Array command. The device remains enabled
for reads until another command is written. Once the
internal WSM has started a block erase, full chip
erase, (multi) word/byte write or block lock-bit
configuration, the device will not recognize the Read
Array command until the WSM completes its
operation unless the WSM is suspended via an Erase
Suspend and (Multi) Word/byte Write Suspend
command. The Read Array command functions
independently of the V
V
4.2 Read Identifier Codes Command
The identifier code operation is initiated by writing the
Read Identifier Codes command. Following the
command write, read cycles from addresses shown in
Figure 4 retrieve the manufacturer, device, block lock
configuration and block erase status (see Table 5 for
identifier code values). To terminate the operation,
write another valid command. Like the Read Array
command, the Read Identifier Codes command
functions independently of the V
must be V
command, the following information can be read:
NOTE:
1. X selects the specific block status code to be
Manufacture Code
Device Code
Block Status Code
•Block is Unlocked
•Block is Locked
•Last erase operation
•Last erase operation did
•Reserved for Future Use
IH
completed successfully
not completed successfully
.
read. See Figure 4 for the device identifier code
memory map.
IH
Code
. Following the Read Identifier Codes
Table 5. Identifier Codes
PP
voltage and RP# must be
Address
X0004
X0005
000000
000001
000002
000003
A
PP
21
-A
voltage and RP#
(1)
(1)
0
DQ
DQ
DQ
DQ
DQ
Data
D4
B0
0
0
1
1
2-7
=0
=1
=0
=1
LHF32K01
4.3 Read Status Register Command
The status register may be read to determine when a
block erase, full chip erase, (multi) word/byte write or
block lock-bit configuration is complete and whether
the operation completed successfully(see Table 14).
It may be read at any time by writing the Read Status
Register command. After writing this command, all
subsequent read operations output data from the
status register until another valid command is written.
The status register contents are latched on the falling
edge of OE# or CE#(Either CE
whichever occurs. OE# or CE#(Either CE
must toggle to V
status register latch. The Read Status Register
command functions independently of the V
RP# must be V
The extended status register may be read to
determine multi word/byte write availability(see Table
14.1). The extended status register may be read at
any time by writing the Multi Word/Byte Write
command. After writing this command, all subsequent
read operations output data from the extended status
register, until another valid command is written. Multi
Word/Byte Write command must be re-issued to
update the extended status register latch.
4.4 Clear Status Register Command
Status register bits SR.5, SR.4, SR.3 and SR.1 are
set to "1"s by the WSM and can only be reset by the
Clear Status Register command. These bits indicate
various failure conditions (see Table 14). By allowing
system
operations (such as cumulatively erasing or locking
multiple blocks or writing several bytes in sequence)
may be performed. The status register may be polled
to determine if an error occurs during the sequence.
To clear the status register, the Clear Status Register
command (50H) is written. It functions independently
of the applied V
command is not functional during block erase, full
chip erase, (multi) word/byte write block lock-bit
configuration,
word/byte write suspend modes.
software to reset these bits, several
IH
block
IH
PP
.
before further reads to update the
Voltage. RP# must be V
erase
suspend
0
# or CE
0
PP
# or CE
or
Rev. 1.55
voltage.
IH
(multi)
. This
1
12
1
#),
#)

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