LH28F320S3NS-L11 Sharp Microelectronics, LH28F320S3NS-L11 Datasheet - Page 13

• Manufacturer Part Number: LH28F320S3NS-L11
• Description: IC FLASH 32MBIT 110NS 56SSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F320S3NS-L11

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 56-SSOP
• Lead Free Status / RoHS Status: Contains lead / Request inventory verification
• Other names: 425-1844; LHF32K01

sharp
NOTES:
1. Refer to DC Characteristics. When V
2. X can be V
3. STS is V
4. RP# at GND±0.2V ensures the lowest deep power-down current.
5. See Section 4.2 for read identifier code data.
6. See Section 4.5 for query data.
7. Command writes involving block erase, full chip erase, (multi) word/byte write or block lock-bit configuration are
8. Refer to Table 4 for valid D
9. Don’t use the timing both OE# and WE# are V
Read
Output Disable
Standby
Deep Power-Down
Read Identifier
Codes
Query
Write
Read
Output Disable
Standby
Deep Power-Down
Read Identifier
Codes
Query
Write
V
(multi) word/byte write or block lock-bit configuration algorithms. It is floated during when the WSM is not busy,
in block erase suspend mode with (multi) word/byte write inactive, (multi) word/byte write suspend mode, or
deep power-down mode.
reliably executed when V
PPLK
Mode
Mode
and V
OL
IL
(if configured to RY/BY# mode) when the WSM is executing internal block erase, full chip erase,
PPH1/2/3
or V
IH
for control pins and addresses, and V
1,2,3,9
3,7,8,9
1,2,3,9
3,7,8,9
Notes
Notes
voltages.
3
3
4
9
9
3
3
4
9
9
PP
IN
=V
during a write operation.
PPH1/2/3
RP#
RP#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IL
IL
Table 3.1. Bus Operations(BYTE#=V
Table 3. Bus Operations(BYTE#=V
PP
and V
≤V
CE
CE
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
X
X
IH
IH
IH
IH
PPLK
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
0
0
#
#
CC
IL
, memory contents can be read, but not altered.
=V
.
LHF32K01
CE
CE
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CC1/2
X
X
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
1
1
#
#
.
PPLK
OE#
OE#
V
V
V
V
V
V
V
V
V
V
X
X
X
X
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
or V
WE#
WE#
PPH1/2/3
V
V
V
V
V
V
V
V
V
V
X
X
X
X
IH
IH
IH
IH
IH
IH
IH
IH
IL
IL
IH
IL
)
See Table
See Table
Address
Address
)
Figure 4
Figure 4
for V
7~11
7~11
See
See
X
X
X
X
X
X
X
X
X
X
PP
. See DC Characteristics for
V
V
X
X
X
X
X
X
X
X
X
X
X
X
X
X
PP
PP
DQ
High Z
High Z
High Z
Note 5
Note 6
High Z
High Z
High Z
Note 5
Note 6
DQ
D
D
D
D
OUT
OUT
0-15
IN
IN
0-7
Rev. 1.55
High Z
High Z
High Z
High Z
High Z
High Z
STS
STS
X
X
X
X
X
X
X
X
10