LH28F320S3NS-L11 Sharp Microelectronics, LH28F320S3NS-L11 Datasheet - Page 45

• Manufacturer Part Number: LH28F320S3NS-L11
• Description: IC FLASH 32MBIT 110NS 56SSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F320S3NS-L11

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 56-SSOP
• Lead Free Status / RoHS Status: Contains lead / Request inventory verification
• Other names: 425-1844; LHF32K01

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6.2.6 ALTERNATIVE CE#-CONTROLLED WRITES
NOTE:
See 3.3V V
NOTES:
1. In systems where CE# defines the write pulse width (within a longer WE# timing waveform), all setup, hold and
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A
4. V
5. See Ordering Information for device speeds (valid operational combinations).
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHEL
WLEL
ELEH
SHEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHGL
QVVL
QVSL
AVAV
PHEL
WLEL
ELEH
SHEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHGL
QVVL
QVSL
Sym.
Sym.
inactive WE# times should be measured relative to the CE# waveform.
configuration.
block lock-bit configuration success (SR.1/3/4/5=0).
PP
should be held at V
Write Cycle Time
RP# High Recovery to CE# Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
WP# V
V
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to STS Going Low
Write Recovery before Read
V
WP# V
Write Cycle Time
RP# High Recovery to CE# Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
WP# V
V
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to STS Going Low
Write Recovery before Read
V
WP# V
CC
PP
PP
PP
PP
Alternative CE#-Controlled Writes for notes 1 through 5.
Setup to CE# Going High
Hold from Valid SRD, STS High Z
Setup to CE# Going High
Hold from Valid SRD, STS High Z
IH
IH
IH
IH
Setup to CE# Going High
Hold from Valid SRD, STS High Z
Setup to CE# Going High
Hold from Valid SRD, STS High Z
PPH1/2/3
IN
and D
Parameter
Parameter
Versions
Versions
until determination of block erase, full chip erase, (multi) word/byte write or
IN
V
V
for block erase, full chip erase, (multi) word/byte write or block lock-bit
CC
CC
(5)
(5)
=3.3V±0.3V, T
=2.7V-3.6V, T
LHF32K01
A
A
=0°C to +70°C
=0°C to +70°C
(1)
Notes
Notes
2,4
2,4
2,4
2,4
2
2
2
3
3
2
2
2
3
3
LH28F320S3-L140
LH28F320S3-L110
Min.
Min.
140
100
100
110
100
100
70
50
50
25
70
50
50
25
1
0
5
5
0
0
0
0
1
0
5
5
0
0
0
0
Max.
Max.
100
100
Rev. 1.55
Unit
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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