LH28F320S3NS-L11 Sharp Microelectronics, LH28F320S3NS-L11 Datasheet - Page 47

IC FLASH 32MBIT 110NS 56SSOP

LH28F320S3NS-L11

Manufacturer Part Number
LH28F320S3NS-L11
Description
IC FLASH 32MBIT 110NS 56SSOP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of LH28F320S3NS-L11

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4Mx8, 2Mx16)
Speed
110ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
56-SSOP
Lead Free Status / RoHS Status
Contains lead / Request inventory verification
Other names
425-1844
LHF32K01

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sharp
6.2.7 RESET OPERATIONS
NOTES:
1. These specifications are valid for all product versions (packages and speeds).
2. If RP# is asserted while a block erase, full chip erase, (multi) word/byte write or block lock-bit configuration
3. A reset time, t
4. When the device power-up, holding RP# low minimum 100ns is required after V
Symbol
t
t
t
PLPH
PLRH
23VPH
operation is not executing, the reset will complete within 100ns.
and also has been in stable there.
RP# Pulse Low Time
(If RP# is tied to V
not applicable)
RP# Low to Reset during Block Erase,
Full Chip Erase, (Multi) Word/Byte Write
or Block Lock-Bit Configuration
V
V
CC
CC
at 2.7V to RP# High
at 3.0V to RP# High
PHQV
STS(R)
STS(R)
RP#(P)
RP#(P)
RP#(P)
V
CC
, is required from the latter of STS going High Z or RP# going high until outputs are valid.
High Z
High Z
2.7/3.3V
Parameter
V
V
V
V
V
V
V
V
V
OL
OL
IH
IL
IH
IL
IH
IL
IL
CC
, this specification is
Figure 21. AC Waveform for Reset Operation
(B)Reset During Block Erase, Full Chip Erase, (Multi) Word/Byte Write
t
t
PLPH
PLPH
Reset AC Specifications
or Block Lock-Bit Configuretion
(A)Reset During Read Array Mode
LHF32K01
(C)V
t
t
PLRH
23VPH
Notes
2,3
CC
4
Power Up Timing
Min.
100
100
V
(1)
CC
=2.7V
Max.
21.5
CC
has been in predefined range
Min.
100
100
V
CC
=3.3V
Max.
21.1
Rev. 1.55
Unit
ns
µs
ns
44

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