MCIMX255AJM4AR2 Freescale Semiconductor, MCIMX255AJM4AR2 Datasheet - Page 33

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MCIMX255AJM4AR2

Manufacturer Part Number
MCIMX255AJM4AR2
Description
Processors - Application Specialized IMX25 1.2 AUTO
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MCIMX255AJM4AR2

Core
ARM926EJ-S
Processor Series
MCIMX25
Maximum Clock Frequency
400 MHz
Instruction / Data Cache Memory
16 KB
Data Ram Size
128 KB
Operating Supply Voltage
1.15 V to 1.52 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
MAPBGA-400
Interface Type
USB
Memory Type
DDR2
Minimum Operating Temperature
- 40 C
1
2
3
4
Freescale Semiconductor
Output pad propagation delay
40%–60%
Output pad propagation delay
40%–60%
Output enable to output valid delay
50%–50%
Output enable to output valid delay
50%–50%
Output enable to output valid delay
drive), 50%–50%
Output enable to output valid delay
40%–60%
Output enable to output valid delay
40%–60%
Output enable to output valid delay
drive), 40%–60%
Output pad slew rate
Output pad slew rate
Output pad slew rate
Output pad dI/dt
Output pad dI/dt
Output pad di/dt
Input pad transition times
Input pad propagation delay, 50%–50%
Input pad propagation delay, 40%–60%
Maximum condition for tpr, tpo, tpi, and tpv: wcs model, 1.1 V, I/O 1.65 V, and 105 °C. Minimum condition for tpr, tpo, and tpv:
bcs model, 1.3 V, I/O 1.95 V and –40 °C. Input transition time from core is 1 ns (20%–80%).
Minimum condition for tps: wcs model, 1.1 V, I/O 1.65 V, and 105 °C. tps is measured between VIL to VIH for rising edge and
between VIH to VIL for falling edge.
Maximum condition for tdit: bcs model, 1.3 V, I/O 1.95 V, and –40 °C.
Maximum condition for tpi and trfi: wcs model, 1.1 V, I/O 1.65 V and 105 °C. Minimum condition for tpi and trfi: bcs model, 1.3 V,
I/O 1.95 V and –40 °C. Input transition time from pad is 5 ns (20%–80%).
3
3
3
(standard drive)
(max. drive)
(high drive)
Parameter
2
2
2
(max. drive)
(high drive)
(standard drive)
4
i.MX25 Applications Processor for Automotive Products, Rev. 9
Table 24. AC Parameters for Mobile DDR I/O (continued)
1
1
(high drive),
(standard drive),
1
1
1
1
1
1
(max. drive),
(high drive),
(standard
(max. drive),
(high drive),
(standard
4
4
Symbol
tpo
tpo
tpv
tpv
tpv
tpv
tpv
tpv
tps
tps
tps
tdit
tdit
tdit
trfi
tpi
tpi
Condition
1.0 pF
1.0 pF
1.0 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
15 pF
35 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
25 pF
50 pF
Load
Rise/Fall
1.04/1.09
1.63/1.56
1.50/1.74
2.73/2.42
1.17/1.01
1.43/1.30
1.38/1.28
1.97/1.92
1.92/1.57
3.12/3.16
1.28/1.12
1.49/1.36
1.43/1.33
1.90/1.84
1.85/1.78
2.80/2.81
0.80/0.92
0.43/0.50
0.37/0.43
0.19/0.23
0.18/0.22
0.10/0.12
0.07/0.08
0.77/1.00
1.59/1.82
Min.
64
69
37
39
18
20
1.73/1.83
2.43/2.52
2.36/2.41
3.77/3.78
1.93/1.61
2.33/2.00
2.25/1.99
3.16/2.86
3.11/2.79
4.97/4.59
2.01/1.70
2.33/2.01
2.24/1.99
2.96/2.68
2.91/2.62
4.37/4.53
1.35/1.50
0.72/0.81
0.62/0.70
0.33/0.37
0.31/0.35
0.16/0.18
0.11/0.13
1.22/1.45
2.04/2.27
Typ.
171
183
100
106
50
52
2.69/2.62
3.79/3.62
3.67/3.46
5.86/5.37
3.06/2.55
3.69/3.13
3.58/3.10
5.01/4.39
4.98/4.13
7.97/6.98
3.09/2.60
3.60/3.06
3.47/3.02
4.59/4.03
4.54/3.96
6.88/6.05
2.23/2.27
1.66/1.68
1.03/1.05
0.75/0.77
0.51/0.53
0.38/0.39
0.16/0.20
1.89/2.21
2.69/3.01
Rise/Fall
Max.
407
432
232
246
116
123
mA/ns
mA/ns
mA/ns
Units
V/ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
33

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