MCIMX255AJM4AR2 Freescale Semiconductor, MCIMX255AJM4AR2 Datasheet - Page 22

• Manufacturer Part Number: MCIMX255AJM4AR2
• Description: Processors - Application Specialized IMX25 1.2 AUTO
• Manufacturer: Freescale Semiconductor

Specifications of MCIMX255AJM4AR2

• Core: ARM926EJ-S
• Processor Series: MCIMX25
• Maximum Clock Frequency: 400 MHz
• Instruction / Data Cache Memory: 16 KB
• Data Ram Size: 128 KB
• Operating Supply Voltage: 1.15 V to 1.52 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: MAPBGA-400
• Interface Type: USB
• Memory Type: DDR2
• Minimum Operating Temperature: - 40 C

3.5.1.3
Table 19
22
1
2
3
4
5
6
Low-level DC input voltage
Input current (no pull-up/down)
High-impedance I/O supply current
High-impedance core supply current
High-level output voltage
Low-level output voltage
Output min. source current
Output min. sink current
DC input logic high
DC input logic low
DC input signal voltage
signal)
DC differential input voltage
Termination voltage
Input current
High-impedance I/O supply current
High-impedance core supply current
OVDD = 1.7 V; V
OVDD = 1.7 V; V
for parameters V
Vin(dc) specifies the allowable DC excursion of each differential input.
Vid(dc) specifies the input differential voltage required for switching. The minimum value is equal to Vih(dc) - Vil(dc).
Vtt is expected to track OVDD/2.
Minimum condition: BCS model, 1.95 V, and –40 °C. Typical condition: typical model, 1.8 V, and 25 °C. Maximum condition:
wcs model, 1.65 V, and 105 °C.
DC Electrical Characteristics
DC Electrical Characteristics
shows the I/O parameters for DDR2 (SSTL_18).
6
(no pull-up/down)
DDR_TYPE = 10 Max Setting DDR I/O DC Parameters
out
oh
out
5
and V
= 280 mV. V
= 1.42 V. (V
3
2
(for differential
1
ol
Table 18. SDRAM DC Electrical Characteristics (continued)
Table 19. DDR2 (SSTL_18) I/O DC Electrical Characteristics
4
i.MX25 Applications Processor for Automotive Products, Rev. 9
for I/O cells is below.
out
out
6
/IOL must be less than 21 W for values of V
6
-OVDD)/IOH must be less than 21 W for values of V
Icc-ovdd
Symbol
Icc-vddi
Icc-ovdd VI = OVDD or 0
Symbol Test Conditions
VIL
VIH(dc)
Icc-vddi
IIN
VIL(dc)
Vin(dc)
Vid(dc)
Voh
IIoh
Vol
IIol
IIN
Vtt
VI = VDD or 0
VI = OVDD
Test Conditions
VI = OVDD or 0
VI = 0
VI = VDD or 0
VI = OVDD
—
—
—
—
—
—
—
—
—
VI = 0
—
OVDD/2 – 0.04
OVDD/2 + 0.125
OVDD – 0.28
–0.3 V
–13.4
Min.
13.4
–0.3
0.25
—
—
—
—
out
between 0 V and 280 mV. Simulation circuit
–0.3 V
Min.
—
—
—
out
OVDD/2 OVDD/2 + 0.04
Typ.
between OVDD and OVDD-0.28 V.
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
OVDD/2 – 0.125
Freescale Semiconductor
OVDD + 0.3
OVDD + 0.3
OVDD+0.6
Max.
1210
0.28
110
980
—
—
—
60
Max.
1180
1220
150
0.8
80
Units
Units
mA
mA
nA
nA
nA
V
V
V
V
V
V
nA
nA
nA
V