MT47H32M16HR-25E AIT:G Micron, MT47H32M16HR-25E AIT:G Datasheet - Page 40

• Manufacturer Part Number: MT47H32M16HR-25E AIT:G
• Description: DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA
• Manufacturer: Micron

ODT DC Electrical Characteristics
Table 13: ODT DC Electrical Characteristics
All voltages are referenced to V
PDF: 09005aef8440dbbc
512mbddr2_ait_aat.pdf – Rev. C 7/11 EN
Parameter
R
EMR (A6, A2) = 0, 1
R
EMR (A6, A2) = 1, 0
R
EMR (A6, A2) = 1, 1
Deviation of VM with respect to V
TT
TT
TT
effective impedance value for 75 setting
effective impedance value for 150 setting
effective impedance value for 50 setting
Notes:
1. R
2. Minimum IT and AT device values are derated by six percent less when the devices oper-
3. Measure voltage (VM) at tested ball with no load.
SS
being tested, and then measuring current, I(V
ate between –40°C and 0°C (T
DDQ
TT1(EFF)
/2
Micron Confidential and Proprietary
and R
TT2(EFF)
are determined by separately applying V
40
512Mb: x8, x16 Automotive DDR2 SDRAM
C
).
Symbol
R
R
R
TT1(EFF)
TT2(EFF)
TT3(EFF)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
VM
ODT DC Electrical Characteristics
IH[AC]
Min
120
60
40
–6
), and I(V
Nom
150
75
50
–
IL[AC]
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IH(AC)
Max
180
90
60
), respectively.
6
and V
Units
%
IL(DC)
to the ball
Notes
1, 2
1, 2
1, 2
3