MT47H32M16HR-25E AIT:G Micron, MT47H32M16HR-25E AIT:G Datasheet - Page 19

• Manufacturer Part Number: MT47H32M16HR-25E AIT:G
• Description: DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA
• Manufacturer: Micron

FBGA Package Capacitance
Table 4: Input Capacitance
PDF: 09005aef8440dbbc
512mbddr2_ait_aat.pdf – Rev. C 7/11 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: Address balls, bank address
balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Delta input capacitance: Address balls, bank
address balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Input/output capacitance: DQ, DQS, DM, NF
Delta input/output capacitance: DQ, DQS, DM,
NF
Notes:
1. This parameter is sampled. V
2. The capacitance per ball group will not differ by more than this maximum amount for
3.
4. Reduce MAX limit by 0.25pF for -25 and -25E speed devices.
5. Reduce MAX limit by 0.5pF for -3, -3E, -5E, -25, -25E, and -37E speed devices.
T
balls, reflecting the fact that they are matched in loading.
any given device.
C
C are not pass/fail parameters; they are targets.
= 25°C, V
Micron Confidential and Proprietary
OUT(DC)
Symbol
C
C
= V
C
C
C
DCK
C
DIO
CK
DI
IO
I
DDQ
/2, V
19
512Mb: x8, x16 Automotive DDR2 SDRAM
DD
OUT
= 1.8V ±0.1V, V
Min
(peak-to-peak) = 0.1V. DM input is grouped with I/O
1.0
1.0
2.5
–
–
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DDQ
Max
0.25
0.25
2.0
2.0
4.0
0.5
= 1.8V ±0.1V, V
‹ 2010 Micron Technology, Inc. All rights reserved.
Units
pF
pF
pF
pF
pF
pF
REF
= V
SS
Packaging
, f = 100 MHz,
Notes
2, 3
1, 4
2, 3
1, 5
2, 3
1