MT47H32M16HR-25E AIT:G Micron, MT47H32M16HR-25E AIT:G Datasheet - Page 117

• Manufacturer Part Number: MT47H32M16HR-25E AIT:G
• Description: DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA
• Manufacturer: Micron

Figure 70: WRITE-to-Power-Down or Self Refresh Entry
Figure 71: WRITE with Auto Precharge-to-Power-Down or Self Refresh Entry
PDF: 09005aef8440dbbc
512mbddr2_ait_aat.pdf – Rev. C 7/11 EN
DQS, DQS#
DQS, DQS#
Command
Command
Address
Address
CK#
CKE
A10
CK#
CKE
A10
DQ
DQ
CK
CK
WRITE
Valid
Valid
WRITE
T0
T0
Notes:
Note:
NOP
NOP
T1
T1
WL = 3
WL = 3
1. Power-down or self refresh entry may occur after the WRITE burst completes.
1. Internal PRECHARGE occurs at Ta0 when WR has completed; power-down entry may oc-
2. WR is programmed through MR9–MR11 and represents (
cur 1 x
to next integer
NOP
NOP
T2
T2
Micron Confidential and Proprietary
t
CK later at Ta1, prior to
NOP
t
NOP
DO
DO
CK.
T3
T3
DO
DO
117
Valid
512Mb: x8, x16 Automotive DDR2 SDRAM
Valid
DO
DO
T4
T4
t
RP being satisfied.
DO
DO
Indicates a break in
time scale
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Valid
Valid
T5
T5
WR 2
Valid 1
Valid
t WTR
Ta0
T6
Transitioning Data
t
self refresh entry 1
self refresh entry
Power-down or
WR [MIN] ns/
Power-down or
Transitioning Data
Power-Down Mode
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NOP
NOP 1
Ta1
T7
t
CK) rounded up
t CKE (MIN)
t CKE (MIN)
Ta2
T8
Don’t Care
Don’t Care