MT58L256L32F Micron Semiconductor Products, Inc., MT58L256L32F Datasheet - Page 21

• Manufacturer Part Number: MT58L256L32F
• Description: 8Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time ZZ is in a HIGH state. After
the device enters SNOOZE MODE, all inputs except ZZ
become gated inputs and are ignored.
NOTE: 1. This parameter is sampled.
8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM
MT58L512L18F_C.p65 – Rev. 2/02
SNOOZE MODE ELECTRICAL CHARACTERISTICS
Outputs (Q)
ALL INPUTS
(except ZZ)
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
SNOOZE MODE is a low-current, “power-down”
I
SUPPLY
CLK
ZZ
SB
2
Z
. The duration of SNOOZE MODE is
t ZZI
t ZZ
I ISB2Z
SNOOZE MODE WAVEFORM
CONDITIONS
ZZ
V
IH
21
FLOW-THROUGH SYNCBURST SRAM
High-Z
the device to enter SNOOZE MODE. When ZZ becomes a
logic HIGH, I
met. Any READ or WRITE operation pending when the
device enters SNOOZE MODE is not guaranteed to com-
plete successfully. Therefore, SNOOZE MODE must not
be initiated until valid pending operations are completed.
ZZ is an asynchronous, active HIGH input that causes
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
t
I
t
t
RZZI
SB
t
RZZ
ZZI
ZZ
2Z
SB
2
Z
is guaranteed after the setup time
MIN
t
KC
0
DESELECT or READ Only
t RZZI
MAX
t
t
10
KC
KC
t RZZ
UNITS
©2002, Micron Technology, Inc.
mA
ns
ns
ns
ns
DON’T CARE
NOTES
1
1
1
1
t
ZZ is