MT58L256L32F Micron Semiconductor Products, Inc., MT58L256L32F Datasheet

MT58L256L32F

Manufacturer Part Number

MT58L256L32F

Description

8Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,

Manufacturer

Micron Semiconductor Products, Inc.

Datasheet

1.MT58L256L32F.pdf (27 pages)

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8Mb SYNCBURST

SRAM

FEATURES

• Fast clock and OE# access times

• Single +3.3V +0.3V/-0.165V power supply (V

• Separate +3.3V or +2.5V isolated output buffer

• SNOOZE MODE for reduced-power standby

• Common data inputs and data outputs

• Individual BYTE WRITE control and GLOBAL WRITE

• Three chip enables for simple depth expansion and

• Clock-controlled and registered addresses, data I/Os

• Internally self-timed WRITE cycle

• Burst control (interleaved or linear burst)

• Automatic power-down for portable applications

• 100-pin TQFP package

• 165-pin FBGA

• Low capacitive bus loading

• x18, x32, and x36 versions available

OPTIONS

• Timing (Access/Cycle/MHz)

• Configurations

• Packages

• Operating Temperature Range

8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM

MT58L512L18F_C.p65 – Rev. 2/02

supply (V

address pipelining

and control signals

7.5ns/8.8ns/113 MHz

8.5ns/10ns/100 MHz

10ns/15ns/66 MHz

3.3V I/O

512K x 18

256K x 32

256K x 36

2.5V I/O

512K x 18

256K x 32

256K x 36

100-pin TQFP (2-chip enable)

100-pin TQFP (3-chip enable)

165-pin, 13mm x 15mm FBGA

Commercial (0°C to +70°C)

Industrial (-40°C to +85°C)**

MT58L256V36FT-10

Part Number Example:

MT58L512L18F

MT58L256L32F

MT58L256L36F

MT58L512V18F

MT58L256V32F

MT58L256V36F

MARKING

None

-7.5

-8.5

-10

™

)

FLOW-THROUGH SYNCBURST SRAM

MT58L512L18F, MT58L256L32F,

MT58L256L36F; MT58L512V18F,

MT58L256V32F, MT58L256V36F

3.3V V

* A Part Marking Guide for the FBGA devices can be found on Micron’s

** Industrial temperature range offered in specific speed grades and

GENERAL DESCRIPTION

speed, low-power CMOS designs that are fabricated us-

ing an advanced CMOS process.

256K x 32, or 256K x 36 SRAM core with advanced syn-

chronous peripheral circuitry and a 2-bit burst counter.

All synchronous inputs pass through registers controlled

by a positive-edge-triggered single-clock input (CLK).

The synchronous inputs include all addresses, all data

inputs, active LOW chip enable (CE#), two additional

chip enables for easy depth expansion (CE2#, CE2), burst

control inputs (ADSC#, ADSP#, ADV#), byte write

Web

NOTE: 1. JEDEC-standard MS-026 BHA (LQFP).

configurations. Contact factory for more information.

The Micron

Micron’s 8Mb SyncBurst SRAMs integrate a 512K x 18,

site—http://www.micron.com/support/index.html.

8Mb: 512K x 18, 256K x 32/36

Micron Technology, Inc., reserves the right to change products or specifications without notice.

, 3.3V or 2.5V I/O, Flow-Through

SyncBurst

100-Pin TQFP

165-Pin FBGA

™

SRAM family employs high-

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