MT58L256L32F Micron Semiconductor Products, Inc., MT58L256L32F Datasheet - Page 13

• Manufacturer Part Number: MT58L256L32F
• Description: 8Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

INTERLEAVED BURST ADDRESS TABLE (MODE = NC OR HIGH)
LINEAR BURST ADDRESS TABLE (MODE = LOW)
8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM
MT58L512L18F_C.p65 – Rev. 2/02
FIRST ADDRESS (EXTERNAL)
FIRST ADDRESS (EXTERNAL)
X...X00
X...X01
X...X10
X...X11
X...X00
X...X01
X...X10
X...X11
NOTE:
FUNCTION
READ
READ
WRITE Byte “a”
WRITE All Bytes
WRITE All Bytes
PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x32/x36)
PARTIAL TRUTH TABLE FOR WRITE COMMANDS (x18)
Using BWE# and BWa# through BWd#, any one or more bytes may be written.
FUNCTION
READ
READ
WRITE Byte “a”
WRITE Byte “b”
WRITE All Bytes
WRITE All Bytes
SECOND ADDRESS (INTERNAL)
SECOND ADDRESS (INTERNAL)
X...X01
X...X00
X...X11
X...X10
X...X01
X...X10
X...X11
X...X00
GW#
H
H
H
H
L
BWE#
GW#
H
X
L
L
L
H
H
H
H
H
L
13
FLOW-THROUGH SYNCBURST SRAM
THIRD ADDRESS (INTERNAL)
THIRD ADDRESS (INTERNAL)
BWa#
BWE#
X
H
X
L
L
H
X
L
L
L
L
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
X...X10
X...X11
X...X00
X...X01
X...X10
X...X11
X...X00
X...X01
BWb#
BWa#
H
H
X
X
L
X
H
H
X
L
L
BWc#
BWb#
X
H
H
X
L
H
H
X
X
L
L
FOURTH ADDRESS (INTERNAL)
FOURTH ADDRESS (INTERNAL)
BWd#
H
H
X
X
L
X...X11
X...X10
X...X01
X...X00
X...X11
X...X00
X...X01
X...X10
©2002, Micron Technology, Inc.