MT58L256L32F Micron Semiconductor Products, Inc., MT58L256L32F Datasheet - Page 12
MT58L256L32F
Manufacturer Part Number
MT58L256L32F
Description
8Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
1.MT58L256L32F.pdf
(27 pages)
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FBGA PIN DESCRIPTIONS (continued)
8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM
MT58L512L18F_C.p65 – Rev. 2/02
1H, 2H, 4C, 4N, 1H, 2H, 4C, 4N,
5L, 5M, 6C, 6D, 5L, 5M, 6C, 6D,
10D, 10E, 10F,
5G, 5H, 5J, 5K, 5G, 5H, 5J, 5K,
6J, 6K, 6L, 6M, 6J, 6K, 6L, 6M,
6E, 6F, 6G, 6H, 6E, 6F, 6G, 6H,
7C, 7D, 7E, 7F, 7C, 7D, 7E, 7F,
5P, 5R, 7P, 7R 5P, 5R, 7P, 7R
5C, 5D, 5E 5F, 5C, 5D, 5E 5F,
6N, 9H, 10C,
2L, 2M, 2N,
4B, 5A, 5N,
1A, 1B, 1C,
3K, 3L, 3M,
3N, 9C, 9D,
7K, 7L, 7M,
1G, 1P, 2C,
2P, 2R, 3H,
1D, 1E, 1F,
3C, 3D, 3E,
9E, 9F, 9G,
7G, 7H, 7J,
11L, 11M,
3F, 3G, 3J,
9J, 9K, 9L,
7N, 8C, 8N
10G, 10H,
10N, 11B,
11J, 11K,
9M, 9N
2J, 2K,
11N
x18
3K, 3L, 3M,
3N, 9C, 9D,
1A, 1B, 1P,
2P, 2R, 3H,
3C, 3D, 3E,
7K, 7J, 7M,
9E, 9F, 9G,
7G, 7H, 7J,
10H, 10N,
3F, 3G, 3J,
9J, 9K, 9L,
7N, 8C, 8N
11A, 11B,
9H, 10C,
x32/x36
5N, 6N,
9M, 9N
2C, 2N,
SYMBOL
V
DNU
V
NC
NF
DD
SS
Q
Supply Isolated Output Buffer Supply: See DC Electrical Characteristics and
Supply Ground: GND.
TYPE
—
–
–
Operating Conditions for range.
Do Not Use: These signals may either be unconnected or wired to
GND to improve package heat dissipation.
No Connect: These signals are not internally connected and
may be connected to ground to improve package heat
No Function: These pins are internally connected to the die and
have the capacitance of an input pin. It is allowable to leave
these pins unconnected or driven by signals.
dissipation. Pin 6N reserved for address pin expansion; 18Mb.
12
FLOW-THROUGH SYNCBURST SRAM
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DESCRIPTION
©2002, Micron Technology, Inc.