MT58L256L32F Micron Semiconductor Products, Inc., MT58L256L32F Datasheet - Page 14

• Manufacturer Part Number: MT58L256L32F
• Description: 8Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

TRUTH TABLE
NOTE: 1. X means “Don’t Care.” # means active LOW. H means logic HIGH. L means logic LOW.
8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM
MT58L512L18F_C.p65 – Rev. 2/02
OPERATION
Deselected Cycle, Power-Down
Deselected Cycle, Power-Down
Deselected Cycle, Power-Down
Deselected Cycle, Power-Down
Deselected Cycle, Power-Down
SNOOZE MODE, Power-Down
READ Cycle, Begin Burst
READ Cycle, Begin Burst
WRITE Cycle, Begin Burst
READ Cycle, Begin Burst
READ Cycle, Begin Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
READ Cycle, Continue Burst
WRITE Cycle, Continue Burst
WRITE Cycle, Continue Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
READ Cycle, Suspend Burst
WRITE Cycle, Suspend Burst
WRITE Cycle, Suspend Burst
2. For WRITE#, L means any one or more byte write enable signals (BWa#, BWb#, BWc# or BWd#) and BWE# are LOW or
3. BWa# enables WRITEs to DQa pins, DQPa. BWb# enables WRITEs to DQbs and DQPb. BWc# enables WRITEs to DQcs and
4. All inputs except OE# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
5. Wait states are inserted by suspending burst.
6. For a WRITE operation following a READ operation, OE# must be HIGH before the input data setup time and held
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8. ADSP# LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more
GW# is LOW. WRITE# = H for all BWx#, BWE#, GW# HIGH.
DQPc. BWd# enables WRITEs to DQds and DQPd. DQPa and DQPb are only available on the x18 and x36 versions. DQPc
and DQPd are only available on the x36 version.
HIGH throughout the input data hold time.
byte write enable signals and BWE# LOW or GW# LOW for the subsequent L-H edge of CLK. Refer to WRITE timing
diagram for clarification.
ADDRESS CE# CE2# CE2
External
External
External
External
External
Current
Current
Current
Current
Current
Current
USED
None
None
None
None
None
None
Next
Next
Next
Next
Next
Next
H
X
X
H
H
X
H
X
X
H
H
X
H
X
L
L
L
L
L
L
L
L
L
X
X
H
X
H
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
14
FLOW-THROUGH SYNCBURST SRAM
ZZ ADSP# ADSC# ADV# WRITE# OE#
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
8Mb: 512K x 18, 256K x 32/36
H
H
X
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
X
L
L
L
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
L
L
L
L
L
L
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
X
X
X
X
X
X
H
X
H
H
H
X
X
H
H
X
X
L
L
L
L
L
L
©2002, Micron Technology, Inc.
CLK
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
X
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
DQ
Q
Q
Q
Q
Q
Q
D
D
D
D
D