MT58L256L32F Micron Semiconductor Products, Inc., MT58L256L32F Datasheet - Page 2

• Manufacturer Part Number: MT58L256L32F
• Description: 8Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE: Functional Block Diagrams illustrate simplified device operation. See Truth Table, Pin Descriptions, and timing diagrams
8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM
MT58L512L18F_C.p65 – Rev. 2/02
SA0, SA1, SAs
SA0, SA1, SAs
ADSC#
ADSP#
MODE
MODE
ADSC#
ADSP#
BWd#
BWb#
BWE#
BWa#
BWE#
ADV#
BWc#
BWb#
BWa#
ADV#
GW#
GW#
CE2#
CE2#
OE#
CE#
CE2
CLK
OE#
CLK
CE#
CE2
for detailed information.
19
18
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
ADDRESS
REGISTER
BYTE “b”
BYTE “a”
REGISTER
ENABLE
BYTE “d”
BYTE “c”
BYTE “b”
BYTE “a”
REGISTER
ENABLE
CLR
FUNCTIONAL BLOCK DIAGRAM
FUNCTIONAL BLOCK DIAGRAM
AND LOGIC
ADDRESS
REGISTER
COUNTER
BINARY
COUNTER AND
CLR
BINARY
LOGIC
Q1
Q0
19
2
SA0-SA1
Q1
Q0
18
SA1'
SA0'
SA0-SA1
256K X 32/36
512K X 18
17
16
SA0'
SA1'
FLOW-THROUGH SYNCBURST SRAM
2
19
18
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
BYTE “b”
BYTE “a”
BYTE “d”
BYTE “b”
BYTE “c”
BYTE “a”
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
9
9
9
9
9
9
512K x 9 x 2
256K x 8 x 4
256K x 9 x 4
MEMORY
MEMORY
ARRAY
ARRAY
18
(x32)
(x36)
36
18
36
SENSE
AMPS
SENSE
AMPS
36
18
4
OUTPUT
BUFFERS
2
BUFFERS
OUTPUT
©2002, Micron Technology, Inc.
REGISTERS
REGISTERS
INPUT
INPUT
18
36
DQPa
DQPb
DQPa
DQPb
DQPc
DQPd
DQs
DQs