MT54W1MH18B Micron Semiconductor Products, Inc., MT54W1MH18B Datasheet - Page 17

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MT54W1MH18B

Manufacturer Part Number
MT54W1MH18B
Description
18Mb Qdrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet

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AC Test Conditions
18Mb: 1.8V V
MT54W1MH18B_H.fm – Rev. H, Pub. 3/03
Input pulse levels . . . . . . . . . . . . . . . . . . 0.25V to 1.25V
Input rise and fall times . . . . . . . . . . . . . . . . . . . . 0.7ns
Input timing reference levels . . . . . . . . . . . . . . . . 0.75V
Output reference levels . . . . . . . . . . . . . . . . . . .V
ZQ for 50 W impedance . . . . . . . . . . . . . . . . . . . . . 250 W
Output load . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 5
DD
, HSTL, QDRIIb2 SRAM
DD
Q/2
17
2 MEG
1.8V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SRAM
X
Output Load Equivalent
8, 1 MEG
DD
V
ZQ
, HSTL, QDRIIb2 SRAM
REF
Figure 5:
0.75V
250Ω
Z = 50Ω
X
O
18, 512K
V
©2003 Micron Technology, Inc.
DD
Q/2
50Ω
X
36

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