MT54W1MH18B Micron Semiconductor Products, Inc., MT54W1MH18B Datasheet - Page 10

no-image

MT54W1MH18B

Manufacturer Part Number
MT54W1MH18B
Description
18Mb Qdrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT54W1MH18BF-4
Manufacturer:
MICRON/美光
Quantity:
20 000
Part Number:
MT54W1MH18BF-5
Manufacturer:
MICRON/美光
Quantity:
20 000
Part Number:
MT54W1MH18BF-5 ES
Manufacturer:
MICRON/美光
Quantity:
20 000
Part Number:
MT54W1MH18BF-6
Manufacturer:
MICRON/美光
Quantity:
20 000
Table 5:
18Mb: 1.8V V
MT54W1MH18B_H.fm – Rev. H, Pub. 3/03
SYMBOL
V
TDO
V
V
DD
NC
DD
SS
DD
Q
, HSTL, QDRIIb2 SRAM
Ball Descriptions (continued)
Output
Supply
Supply
Supply
TYPE
IEEE 1149.1 Test Output: 1.8V I/0 level.
Power Supply: 1.8V nominal. See DC Electrical Characteristics and Operating Conditions for
range.
Power Supply: Isolated Output Buffer Supply. Nominally, 1.5V. 1.8V is also permissible. See DC
Electrical Characteristics and Operating Conditions for range.
Power Supply: GND.
No Connect: These balls are internally connected to the die, but have no function and may be
left not connected to the board to minimize ball count.
10
2 MEG
1.8V V
DESCRIPTION
Micron Technology, Inc., reserves the right to change products or specifications without notice.
X
8, 1 MEG
DD
, HSTL, QDRIIb2 SRAM
X
18, 512K
©2003 Micron Technology, Inc.
X
36

Related parts for MT54W1MH18B