MT54W1MH18B Micron Semiconductor Products, Inc., MT54W1MH18B Datasheet - Page 11

• Manufacturer Part Number: MT54W1MH18B
• Description: 18Mb Qdrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE
18Mb: 1.8V V
MT54W1MH18B_H.fm – Rev. H, Pub. 3/03
1. The address is concatenated with one additional internal LSB to facilitate BURST operation. The address order is
2. State transitions: RD = (R# = LOW); WT = (W# = LOW).
3. Read and write state machines can be simultaneously active.
4. State machine, control timing sequence is controlled by K.
always fixed as: xxx...xxx+0, xxx...xxx+1. Bus cycle is terminated at the end of this sequence (burst count = 2).
:
WRITE ADDRESS
DD
READ ADDRESS
, HSTL, QDRIIb2 SRAM
LOAD NEW
LOAD NEW
AT K#↑
always
always
RD
WT
Bus Cycle State Diagram
WRITE DOUBLE
READ DOUBLE
WT
RD
Figure 4:
AT K#↑
11
2 MEG
1.8V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
X
/RD
/WT
8, 1 MEG
DD
, HSTL, QDRIIb2 SRAM
WRITE PORT NOP
READ PORT NOP
POWER-UP
X
R_Init=0
18, 512K
Supply voltage
Supply voltage
provided
provided
©2003 Micron Technology, Inc.
X
36
/RD
/WT