MT54W1MH18B Micron Semiconductor Products, Inc., MT54W1MH18B Datasheet - Page 14

• Manufacturer Part Number: MT54W1MH18B
• Description: 18Mb Qdrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 10: I
Notes appear following parameter tables on page 16; 0°C £ T
Table 11: Capacitance
Note 13; notes appear following parameter tables on page 16
Table 12: Thermal Resistance
Note 13; notes appear following parameter tables on page 16
18Mb: 1.8V V
MT54W1MH18B_H.fm – Rev. H, Pub. 3/03
DESCRIPTION
DESCRIPTION
DESCRIPTION
Operating Supply
Current: DDR
Standby Supply
Current: NOP
Output Supply
Current: DDR
(Information only)
Address/Control Input Capacitance
Output Capacitance (Q)
Clock Capacitance
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
Junction to Balls (Bottom)
.
DD
, HSTL, QDRIIb2 SRAM
DD
Operating Conditions and Maximum Limits
address and data bits toggling on
open; 100% bus utilization; 50%
All inputs £ V
time
All addresses/data static
t
KHKH =
Device in NOP state;
³
each clock cycle
t
CONDITIONS
KHKH (MIN); Outputs
C
L
t
= 15pF
IL
KHKH (MIN);
Soldered on a 4.25 x 1.125 inch,
or
4-layer printed circuit board
³
T
A
V
IH
= 25ºC; f = 1 MHz
CONDITIONS
CONDITIONS
; Cycle
x8, x18
x8, x18
SYM
14
I
A
x36
I
x36
DD
x18
x36
I
x8
SB1
DD
£ +70°C; V
2 MEG
Q
1.8V V
TYP
TBD
TBD
TBD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
SYMBOL
X
= 1.8V ±0.1V unless otherwise noted
C
C
600
800
200
210
142
C
32
71
CK
SYMBOL
-4
O
8, 1 MEG
I
DD
q
q
q
JA
JC
JB
, HSTL, QDRIIb2 SRAM
330
445
170
180
113
25
57
-5
MAX
TYP
4.5
5.5
6
280
380
150
160
19.4
TYP
21
47
95
1.0
9.6
-6
X
18, 512K
-7.5
235
310
125
135
17
38
76
MAX
5.5
6.5
UNITS
ºC/W
ºC/W
7
ºC/W
©2003 Micron Technology, Inc.
UNITS
mA
mA
mA
X
NOTES
UNITS
NOTES
pF
pF
pF
36
10, 11
14
15
9, 10
12