SAM7L128 Atmel Corporation, SAM7L128 Datasheet - Page 148

• Manufacturer Part Number: SAM7L128
• Manufacturer: Atmel Corporation

Specifications of SAM7L128

• Flash (kbytes): 128 Kbytes
• Pin Count: 144
• Max. Operating Frequency: 36 MHz
• Cpu: ARM7TDMI
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 80
• Ext Interrupts: 80
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Twi (i2c): 1
• Uart: 3
• Segment Lcd: 40
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 4
• Adc Resolution (bits): 10
• Adc Speed (ksps): 460
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 6
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8/3.3
• Operating Voltage (vcc): 1.8 to 3.6
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 3
• Output Compare Channels: 3
• Input Capture Channels: 3
• Pwm Channels: 4
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: No

Table 19-2.
19.3.3.2
148
Symbol
FL_ID
FL_SIZE
FL_PAGE_SIZE
FL_NB_PLANE
FL_PLANE[0]
...
FL_PLANE[FL_NB_PLANE-1]
FL_NB_LOCK
FL_LOCK[0]
...
AT91SAM7L128/64 Preliminary
Write Commands
Flash Descriptor Definition
Several commands can be used to program the Flash.
Flash technology requires that an erase is done before programming. The full memory plane can
be erased at the same time, or several pages can be erased at the same time (refer to
Commands” on page
using EWP or EWPL commands.
After programming, the page (the whole lock region) can be locked to prevent miscellaneous
write or erase sequences. The lock bit can be automatically set after page programming using
WPL or EWPL commands.
Data to be written are stored in an internal latch buffer. The size of the latch buffer corresponds
to the page size. The latch buffer wraps around within the internal memory area address space
and is repeated as many times as the number of pages within this address space.
Note:
Write operations are performed in a number of wait states equal to the number of wait states for
read operations.
Data are written to the latch buffer before the programming command is written to the Flash
Command Register MC_FCR. The sequence is as follows:
Two errors can be detected in the MC_FSR register after a programming sequence:
• Write the full page, at any page address, within the internal memory area address space.
• Programming starts as soon as the page number and the programming command are written
• When programming is completed, the bit FRDY in the Flash Programming Status Register
• a Command Error: a bad keyword has been written in the MC_FCR register.
to the Flash Command Register. The FRDY bit in the Flash Programming Status Register
(MC_FSR) is automatically cleared.
(MC_FSR) rises. If an interrupt has been enabled by setting the bit FRDY in MC_FMR, the
interrupt line of the Memory Controller is activated.
Writing of 8-bit and 16-bit data is not allowed and may lead to unpredictable data corruption.
Word Index
0
1
2
3
4
4 + FL_NB_PLANE - 1
4 + FL_NB_PLANE
4 + FL_NB_PLANE + 1
149). Also, a page erase can be automatically done before a page write
Page size in bytes
Number of bytes in the first lock region.
Description
Flash Interface Description
Flash size in bytes
Number of planes.
Number of bytes in the first plane.
Number of bytes in the last plane.
Number of lock bits. A bit is associated
with a lock region. A lock bit is used to
prevent write or erase operations in the
lock region.
6257A–ATARM–20-Feb-08
“Erase