SAM3S16C Atmel Corporation, SAM3S16C Datasheet - Page 303
SAM3S16C
Manufacturer Part Number
SAM3S16C
Description
Manufacturer
Atmel Corporation
Datasheet
1.SAM3S16C.pdf
(1130 pages)
Specifications of SAM3S16C
Flash (kbytes)
1024 Kbytes
Pin Count
100
Max. Operating Frequency
100 MHz
Cpu
Cortex-M3
# Of Touch Channels
39
Hardware Qtouch Acquisition
No
Max I/o Pins
79
Ext Interrupts
79
Usb Transceiver
1
Quadrature Decoder Channels
2
Usb Speed
Full Speed
Usb Interface
Device
Spi
3
Twi (i2c)
2
Uart
4
Ssc
1
Sd / Emmc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
1000
Analog Comparators
1
Resistive Touch Screen
No
Dac Channels
2
Dac Resolution (bits)
12
Temp. Sensor
Yes
Crypto Engine
No
Sram (kbytes)
128
Self Program Memory
YES
External Bus Interface
1
Dram Memory
No
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.62 to 3.6
Fpu
No
Mpu / Mmu
Yes / No
Timers
6
Output Compare Channels
6
Input Capture Channels
6
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
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20.4.3.4
11117B–ATARM–18-Oct-11
11117B–ATARM–18-Oct-11
Lock Bit Protection
Table 20-4.
Two errors can be detected in the EEFC_FSR register after a programming sequence:
Lock bits are associated with several pages in the embedded Flash memory plane. This defines
lock regions in the embedded Flash memory plane. They prevent writing/erasing protected
pages.
The lock sequence is:
One error can be detected in the EEFC_FSR register after a programming sequence:
It is possible to clear lock bits previously set. Then the locked region can be erased or pro-
grammed. The unlock sequence is:
• When the programming completes, the FRDY bit in the Flash Programming Status Register
• Command Error: a bad keyword has been written in the EEFC_FCR register.
• Lock Error: at least one page to be erased belongs to a locked region. The erase command
• Flash Error: at the end of the programming, the EraseVerify test of the Flash memory has
• The Set Lock command (SLB) and a page number to be protected are written in the Flash
• When the locking completes, the FRDY bit in the Flash Programming Status Register
• If the lock bit number is greater than the total number of lock bits, then the command has no
• Command Error: a bad keyword has been written in the EEFC_FCR register.
• Flash Error: at the end of the programming, the EraseVerify or WriteVerify test of the Flash
• The Clear Lock command (CLB) and a page number to be unprotected are written in the
(EEFC_FSR) rises. If an interrupt has been enabled by setting the FRDY bit in EEFC_FMR,
the interrupt line of the NVIC is activated.
has been refused, no page has been erased. A command must be run previously to unlock
the corresponding region.
failed.
Command Register.
(EEFC_FSR) rises. If an interrupt has been enabled by setting the FRDY bit in EEFC_FMR,
the interrupt line of the NVIC is activated.
effect. The result of the SLB command can be checked running a GLB (Get Lock Bit)
command.
memory has failed.
Flash Command Register.
FARG[1:0]
– For the EPA command, the 2 lowest bits of the FARG field define the number of
pages to be erased (FARG[1:0]):
0
1
2
3
FARG Field for EPA command:
Number of pages to be erased with EPA command
4 pages
8 pages
16 pages
32 pages
SAM3S16
SAM3S16
261
261
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