MC9S08GT16CFB Freescale Semiconductor, MC9S08GT16CFB Datasheet - Page 261

MC9S08GT16CFB

Manufacturer Part Number
MC9S08GT16CFB
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MC9S08GT16CFB

Cpu Family
HCS08
Device Core Size
8b
Frequency (max)
20MHz
Interface Type
SCI/SPI
Program Memory Type
Flash
Program Memory Size
16KB
Total Internal Ram Size
1KB
# I/os (max)
36
Number Of Timers - General Purpose
4
Operating Supply Voltage (typ)
2.5/3.3V
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
2.08V
On-chip Adc
8-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Package Type
PQFP
Lead Free Status / Rohs Status
Not Compliant

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A.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) This device was
qualified to AEC-Q100 Rev E. A device is considered to have failed if, after exposure to ESD pulses, the
device no longer meets the device specification requirements. Complete dc parametric and functional
testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
A.5
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Freescale Semiconductor
Supply voltage (run, wait and stop modes.)
Minimum RAM retention supply voltage applied to
V
Low-voltage detection threshold — high range
Low-voltage detection threshold — low range
Low-voltage warning threshold — high range
Low-voltage warning threshold — low range
DD
0 < f
0 < f
Bus
Bus
< 8 MHz
< 20 MHz
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
ESD Target for Machine Model (MM)
ESD Target for Human Body Model (HBM)
MM circuit description
HBM circuit description
Parameter
Parameter
(Temperature Range = –40 to 85°C Ambient)
Table A-4. DC Characteristics (Sheet 1 of 2)
(V
(V
(V
(V
(V
(V
(V
(V
Table A-3. ESD Protection Characteristics
DD
DD
DD
DD
DD
DD
DD
DD
falling)
rising)
falling)
rising)
falling)
rising)
falling)
rising)
MC9S08GB/GT Data Sheet, Rev. 2.3
Symbol
V
V
V
V
V
V
LVWH
LVDH
LVWL
LVDL
RAM
DD
Symbol
V
V
THHBM
THMM
Electrostatic Discharge (ESD) Protection Characteristics
2.08
2.08
2.16
1.80
1.88
2.35
2.35
2.08
2.16
1.0
Min
1.8
2
Value
2000
Typical
200
2.19
1.82
1.90
2.40
2.40
2.19
2.1
2.1
1
Unit
V
V
Max
2.27
1.91
1.99
2.27
3.6
3.6
2.2
2.5
2.2
Unit
V
V
V
V
V
V
261

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