DSPIC33EP256MU806-E/MR Microchip Technology, DSPIC33EP256MU806-E/MR Datasheet - Page 125

• Manufacturer Part Number: DSPIC33EP256MU806-E/MR
• Description: 64 PINS, 256KB Flash, 28KB RAM, 60 MHz, USB, 2xCAN, 15 DMA 64 QFN 9x9x0.9mm TUBE
• Manufacturer: Microchip Technology
• Series: dsPIC™ 33EPr

Specifications of DSPIC33EP256MU806-E/MR

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 60 MIPs
• Connectivity: CAN, I²C, IrDA, LIN, QEI, SPI, UART/USART, USB OTG
• Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, WDT
• Number Of I /o: 51
• Program Memory Size: 256KB (85.5K x 24)
• Program Memory Type: FLASH
• Eeprom Size: -
• Ram Size: 12K x 16
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 24x10b/12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 64-VFQFN Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

5.0
The
PIC24EPXXXGU810/814 devices contain internal
Flash program memory for storing and executing
application code. The memory is readable, writable and
erasable during normal operation over the entire V
range.
Flash memory can be programmed in two ways:
• In-Circuit Serial Programming™ (ICSP™)
• Run-Time Self-Programming (RTSP)
ICSP allows a dsPIC33EPXXXMU806/810/814 and
PIC24EPXXXGU810/814
programmed while in the end application circuit. This is
done with two lines for programming clock and
programming data (one of the alternate programming
FIGURE 5-1:
 2009-2011 Microchip Technology Inc.
programming capability
Note 1: This data sheet summarizes the features
dsPIC33EPXXXMU806/810/814 and PIC24EPXXXGU810/814
2: Some registers and associated bits
FLASH PROGRAM MEMORY
dsPIC33EPXXXMU806/810/814
of the dsPIC33EPXXXMU806/810/814
and PIC24EPXXXGU810/814 families of
devices. It is not intended to be a compre-
hensive reference source. To comple-
ment the information in this data sheet,
refer to Section 5. “Flash Program-
ming” (DS70609) of the “dsPIC33E/
PIC24E
which is available from the Microchip web
site (www.microchip.com).
described in this section may not be
available on all devices. Refer to
Section 4.0 “Memory Organization”
this data sheet for device-specific register
and bit information.
Using
Program Counter
Using
Table Instruction
User/Configuration
Space Select
ADDRESSING FOR TABLE REGISTERS
Family Reference Manual”,
device
1/0
to
0
be
TBLPAG Reg
8 bits
serially
and
Preliminary
in
DD
Program Counter
24-bit EA
24 bits
pin pairs: PGECx/PGEDx), and three other lines for
power (V
This allows customers to manufacture boards with
unprogrammed devices and then program the digital
signal controller just before shipping the product. This
also allows the most recent firmware or a custom
firmware to be programmed.
RTSP is accomplished using TBLRD (table read) and
TBLWT (table write) instructions. With RTSP, the user
application can write program memory data either in
blocks or ‘rows’ of 128 instructions (384 bytes) at a time
or a single program memory word, and erase program
memory in blocks or ‘pages’ of 1024 instructions (3072
bytes) at a time.
5.1
Regardless of the method used, all programming of
Flash memory is done with the table read and table
write instructions. These allow direct read and write
access to the program memory space from the data
memory while the device is in normal operating mode.
The 24-bit target address in the program memory is
formed using bits <7:0> of the TBLPAG register and the
Effective Address (EA) from a W register specified in
the table instruction, as shown in
The TBLRDL and the TBLWTL instructions are used to
read or write to bits <15:0> of program memory.
TBLRDL and TBLWTL can access program memory in
both Word and Byte modes.
The TBLRDH and TBLWTH instructions are used to read
or write to bits <23:16> of program memory. TBLRDH
and TBLWTH can also access program memory in Word
or Byte mode.
Working Reg EA
16 bits
Table Instructions and Flash
Programming
DD
), ground (V
0
SS
) and Master Clear (MCLR).
Byte
Select
Figure
DS70616E-page 125
5-1.