HD64F3048BF25 Renesas Electronics America, HD64F3048BF25 Datasheet - Page 638

• Manufacturer Part Number: HD64F3048BF25
• Description: IC H8 MCU FLASH 128K 100QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3048BF25

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 8MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 18 ROM (H8/3048F-ONE: Single Power Supply, H8/3048B Mask ROM Version)
Table 18.11 Hardware Protection
Item
FWE pin
protection
Reset/
standby
protection
Error
protection
Notes: 1. Excluding a RAM area overlapping flash memory.
Rev. 3.00 Sep 27, 2006 page 610 of 872
REJ09B0325-0300
2. It is possible to perform a program-verify operation on the 128 bytes being
3. All blocks are unerasable and block-by-block specification is not possible.
4. See section 4.2.2, Reset Sequence, and section 18.11, Notes on Flash Memory
programmed, or an erase-verify operation on the block being erased.
Programming/Erasing. The H8/3048F-ONE requires at least 20 system clocks for a
reset period during operation.
Description
When a low level is input to the FWE pin,
FLMCR1, and EBR are initialized, and the
program/erase-protected state is entered.
In a reset (including a WDT overflow reset) and
in standby mode, FLMCR1, FLMCR2, and EBR
are initialized, and the program/erase-protected
state is entered.
In a reset via the RES pin, the reset state is not
entered unless the RES pin is held low until
oscillation stabilizes after powering on. In the
case of a reset during operation, hold the RES
pin low for the RES pulse width specified in the
AC Characteristics section *
When a microcomputer operation error (error
generation (FLER = 1)) was detected while flash
memory was being programmed/erased, error
protection is enabled. At this time, the FLMCR1
and EBR settings are held, but programming/
erasing is aborted at the time the error was
generated. Error protection is released only by a
reset via the RES pin or a WDT reset, or in the
hardware standby mode.
4
.
Program Erase
No *
No
No
1
Functions
No *
No *
No *
3
3
3
Verify
No
No
Yes *
2