HD64F3048BF25 Renesas Electronics America, HD64F3048BF25 Datasheet - Page 630
HD64F3048BF25
Manufacturer Part Number
HD64F3048BF25
Description
IC H8 MCU FLASH 128K 100QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet
1.DF3048BF25V.pdf
(903 pages)
Specifications of HD64F3048BF25
Core Processor
H8/300H
Core Size
16-Bit
Speed
8MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD64F3048BF25
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
HD64F3048BF25V
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
- Current page: 630 of 903
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Section 18 ROM (H8/3048F-ONE: Single Power Supply, H8/3048B Mask ROM Version)
18.7.1
To write data or programs to flash memory, the program/program-verify flowchart shown in figure
18.13 should be followed. Performing program operations according to this flowchart will enable
data or programs to be written to flash memory without subjecting the device to voltage stress or
sacrificing program data reliability. Programming should be carried out 128 bytes at a time.
The wait times after bits are set or cleared in the flash memory control register 1 (FLMCR1) and
the maximum number of programming operations (N) are shown in table 21.11 in section 21.1.6,
Flash Memory Characteristics.
Following the elapse of (t
written consecutively to the write addresses. The lower 8 bits of the first address written to must
be H'00 and H'80, 128 consecutive byte data transfers are performed. The program address and
program data are latched in the flash memory. A 128-byte data transfer must be performed even if
writing fewer than 128 bytes; in this case, H'FF data must be written to the extra addresses.
Next, the watchdog timer (WDT) is set to prevent overprogramming due to program runaway, etc.
Set a value greater than (t
entering program mode (program setup) is performed next by setting the PSU bit in FLMCR1.
The operating mode is then switched to program mode by setting the P bit in FLMCR1 after the
elapse of at least (t
time. Make a program setting so that the time for one programming operation is within the range
of (t
The wait time after P bit setting must be changed according to the number of reprogramming
loops. For details, see Notes on Program/Program-Verify Procedure.
Rev. 3.00 Sep 27, 2006 page 602 of 872
REJ09B0325-0300
sp
) µs.
Program Mode
spsu
) µs. The time during which the P bit is set is the flash memory programming
sswe
spsu
) µs or more after the SWE bit is set to 1 in FLMCR1, 128-byte data is
+ t
sp
+ t
cp
+ t
cpsu
) µs as the WDT overflow period. Preparation for
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