DF2378BVFQ35WV Renesas Electronics America, DF2378BVFQ35WV Datasheet - Page 93

• Manufacturer Part Number: DF2378BVFQ35WV
• Description: IC H8S/2378 MCU FLASH 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378BVFQ35WV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 35MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-QFP
• For Use With: EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Type
Bus
control
Symbol
RAS/
RAS2
RAS3 to
RAS5
RAS *
CAS *
WE *
WAIT
1
1
1
H8S/2378
0.18μm
F-ZTAT Group,
H8S/2378R
0.18μm
F-ZTAT Group
(LQFP-144)
109, 110,
35, 36
109
110
35
84
H8S/2378
0.18μm
F-ZTAT Group,
H8S/2378R
0.18μm
F-ZTAT Group
(LGA-145)
A12,
A13,
L1,
M1
A12
A13
L1
J11
Pin No.
H8S/2377
H8S/2377R
109, 110,
35, 36
109
110
35
84
Rev.7.00 Mar. 18, 2009 page 25 of 1136
H8S/2375
H8S/2373
H8S/2375R
H8S/2373R I/O
109, 110,
35, 36
109
110
35
84
Output Row address strobe
Output Row address strobe
Output Column address
Output Write enable signal
Input
Section 1 Overview
REJ09B0109-0700
Function
signal for the
synchronous DRAM
interface.
RAS signal is a row
address strobe
signal when areas 2
to 5 are set to the
continuous DRAM
space.
signal for the
synchronous DRAM
of the synchronous
DRAM interface.
strobe signal for the
synchronous DRAM
of the synchronous
DRAM interface.
for the synchronous
DRAM of the
synchronous DRAM
interface.
Requests insertion
of a wait state in the
bus cycle when
accessing external
3-state address
space.