DF2378BVFQ35WV Renesas Electronics America, DF2378BVFQ35WV Datasheet - Page 282

IC H8S/2378 MCU FLASH 144-QFP

DF2378BVFQ35WV

Manufacturer Part Number
DF2378BVFQ35WV
Description
IC H8S/2378 MCU FLASH 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2378BVFQ35WV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
35MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-QFP
For Use With
EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2378BVFQ35WV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
When DDS = 1 or EDDS = 1: Burst access is performed by determining the address only,
irrespective of the bus master. With the DRAM interface, the DACK or EDACK output goes low
from the T
Figure 6.41 shows the DACK or EDACK output timing for the DRAM interface when DDS = 1 or
EDDS = 1.
Rev.7.00 Mar. 18, 2009 page 214 of 1136
REJ09B0109-0700
Figure 6.41 Example of DACK/EDACK Output Timing when DDS = 1 or EDDS = 1
Read
Write
Note: n = 2 to 5
c1
DACK or EDACK
state.
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
(RAST = 0, CAST = 0)
T
p
Row address
High
High
T
r
T
c1
Column address
T
c2

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