DF2378BVFQ35WV Renesas Electronics America, DF2378BVFQ35WV Datasheet - Page 912

• Manufacturer Part Number: DF2378BVFQ35WV
• Description: IC H8S/2378 MCU FLASH 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378BVFQ35WV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 35MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-QFP
• For Use With: EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 20 Flash Memory (0.35-μm F-ZTAT Version)
20.5.4
EBR2 specifies the flash memory erase area block. EBR2 is initialized to H'00 when the SWE bit
in FLMCR1 is 0. Set only one bit in EBR2 and EBR1 together (do not set more than one bit at the
same time). Setting more than one bit will automatically clear all EBR1 and EBR2 bits to 0. For
details, see table 20.3.
Bit
7, 6
5
4
3
2
1
0
Rev.7.00 Mar. 18, 2009 page 844 of 1136
REJ09B0109-0700
Bit Name
⎯
EB13
EB12
EB11
EB10
EB9
EB8
Erase Block Register 2 (EBR2)
Initial Value
All 0
0
0
0
0
0
0
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
Description
Reserved
The initial value should not be modified.
When this bit is set to 1, 64 kbytes of EB13 are to
be erased.
When this bit is set to 1, 64 kbytes of EB12 are to
be erased.
When this bit is set to 1, 64 kbytes of EB11 are to
be erased.
When this bit is set to 1, 64 kbytes of EB10 are to
be erased.
When this bit is set to 1, 64 kbytes of EB9 are to be
erased.
When this bit is set to 1, 32 kbytes of EB8 are to be
erased.