DF2378BVFQ35WV Renesas Electronics America, DF2378BVFQ35WV Datasheet - Page 216

• Manufacturer Part Number: DF2378BVFQ35WV
• Description: IC H8S/2378 MCU FLASH 144-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378BVFQ35WV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 35MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 144-QFP
• For Use With: EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
Bit
10
9
8
Legend: ×: Don’t care.
Note:
Rev.7.00 Mar. 18, 2009 page 148 of 1136
REJ09B0109-0700
Bit Name
W22
W21
W20
* The synchronous DRAM interface is not supported by the H8S/2378 Group.
Initial Value
1
1
1
R/W
R/W
R/W
R/W
Description
Area 2 Wait Control 2 to 0
These bits select the number of program wait
states when accessing area 2 while AST2 bit in
ASTCR = 1.
A CAS latency is set when the synchronous DRAM
is connected * . The setting of area 2 is reflected to
the setting of areas 2 to 5. A CAS latency can be
set regardless of whether or not an ASTCR wait
state insertion is enabled.
000: Program wait not inserted
001: 1 program wait state inserted
010: 2 program wait states inserted
011: 3 program wait states inserted
100: 4 program wait states inserted
101: 5 program wait states inserted
110: 6 program wait states inserted
111: 7 program wait states inserted
000: Synchronous DRAM of CAS latency 1 is
001: Synchronous DRAM of CAS latency 2 is
010: Synchronous DRAM of CAS latency 3 is
011: Synchronous DRAM of CAS latency 4 is
1×××: Setting prohibited.
connected to areas 2 to 5.
connected to areas 2 to 5.
connected to areas 2 to 5.
connected to areas 2 to 5.