DF2378BVFQ35WV Renesas Electronics America, DF2378BVFQ35WV Datasheet - Page 274

IC H8S/2378 MCU FLASH 144-QFP

DF2378BVFQ35WV

Manufacturer Part Number
DF2378BVFQ35WV
Description
IC H8S/2378 MCU FLASH 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet

Specifications of DF2378BVFQ35WV

Core Processor
H8S/2000
Core Size
16-Bit
Speed
35MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
144-QFP
For Use With
EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2378BVFQ35WV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
Rev.7.00 Mar. 18, 2009 page 206 of 1136
REJ09B0109-0700
φ
Address bus
RASn (CSn)
UCAS, LCAS
RD
OE
Data bus
Note: n = 2 to 5
⎯ a refresh operation is initiated in the RAS down state
⎯ self-refreshing is performed
⎯ the chip enters software standby mode
⎯ the external bus is released
⎯ the RCDM bit or BE bit is cleared to 0
If a transition is made to the all-module-clocks-stopped mode in the RAS down state, the clock
will stop with RAS low. To enter the all-module-clocks-stopped mode with RAS high, the
RCDM bit must be cleared to 0 before executing the SLEEP instruction.
Figure 6.32 Example of Operation Timing in RAS Down Mode
T
Row address
p
DRAM space read
T
r
(RAST = 0, CAST = 0)
Column address 1
T
c1
T
c2
External address
Normal space
T
1
read
T
2
Column address 2
DRAM space
T
c1
read
T
c2

Related parts for DF2378BVFQ35WV