DF2398TE20V Renesas Electronics America, DF2398TE20V Datasheet - Page 612
DF2398TE20V
Manufacturer Part Number
DF2398TE20V
Description
IC H8S MCU FLASH 256K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2398TE20V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
For Use With
YR0K42378FC000BA - KIT EVAL FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
HD64F2398TE20V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2398TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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19.7
19.7.1
Note: * Determined by the state of the FWE pin.
FLMCR1 is an 8-bit register used for flash memory operating mode control. Program-verify mode or erase-verify mode is
entered by setting SWE to 1 when FWE = 1. Program mode is entered by setting SWE to 1 when FWE = 1, then setting
the PSU bit in FLMCR2, and finally setting the P bit. Erase mode is entered by setting SWE to 1 when FWE = 1, then
setting the ESU bit in FLMCR2, and finally setting the E bit. FLMCR1 is initialized by a reset, and in hardware standby
mode and software standby mode. Its initial value is H'80 when a high level is input to the FWE pin, and H'00 when a low
level is input. When on-chip flash memory is disabled, a read will return H'00, and writes are invalid.
Writes to the SWE bit in FLMCR1 are enabled only when FWE = 1; writes to the EV and PV bits only when FWE=1 and
SWE=1; writes to the E bit only when FWE = 1, SWE = 1, and ESU = 1; and writes to the P bit only when FWE = 1,
SWE = 1, and PSU = 1.
Bit 7—Flash Write Enable Bit (FWE): Sets hardware protection against flash memory programming/erasing. See
section 19.14, Flash Memory Programming and Erasing Precautions, before using this bit.
Bit 6—Software Write Enable Bit (SWE): Enables or disables flash memory programming. SWE should be set before
setting bits ESU, PSU, EV, PV, E, P, and EB9 to EB0, and should not be cleared at the same time as these bits.
Bits 5 and 4—Reserved: These bits cannot be modified and are always read as 0.
Rev.6.00 Oct.28.2004 page 582 of 1016
REJ09B0138-0600H
Bit
Initial value
Read/Write
Register Descriptions
Flash Memory Control Register 1 (FLMCR1)
Bit 7
FWE
0
1
Bit 6
SWE
0
1
FWE
—*
7
R
Description
When a low level is input to the FWE pin (hardware-protected state)
When a high level is input to the FWE pin
Description
Writes disabled
Writes enabled
[Setting condition]
When FWE = 1
SWE
R/W
6
0
—
—
5
0
—
—
4
0
R/W
EV
3
0
R/W
PV
2
0
R/W
1
E
0
R/W
0
0
P
(Initial value)
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