mc68hc908kx8 Freescale Semiconductor, Inc, mc68hc908kx8 Datasheet - Page 34

• Manufacturer Part Number: mc68hc908kx8
• Description: M68hc08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

Memory
2.9 FLASH Program/Read Operation
Programming of the FLASH memory is done on a row basis. A row consists of 32 consecutive bytes
starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0, and $XXE0. Use this
step-by-step procedure to program a row of FLASH memory
This program sequence is repeated throughout the memory until all data is programmed.
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10. Clear the PGM bit
11. Wait for time, t
12. Clear the HVEN bit.
13. After time, t
1. The time between each FLASH address change, or the time between the last FLASH address programmed to clearing
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address being programmed
8. Wait for time, t
9. Repeat step 7 and 8 until all desired bytes within the row are programmed.
PGM bit, must not exceed the maximum programming time, t
address and data for programming.
Only bytes which are currently $FF may be programmed.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Memory
RCV
MC68HC908KX8 • MC68HC908KX2 • MC68HC08KX8 Data Sheet, Rev. 2.1
PROG
NVH
(typical 1 µs), the memory can be accessed in read mode again.
NVS
PGS
Characteristics.
(1)
(minimum 5 µs).
.
(minimum 30 µs).
(minimum 10 µs).
(minimum 5 µs).
NOTE
NOTE
PROG
PROG
maximum.
(1)
(Figure 2-4
.
maximum. See
is a flowchart representation).
17.11
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