BF246A Fairchild Semiconductor, BF246A Datasheet - Page 98

IC AMP RF N-CH 30V TO-92

BF246A

Manufacturer Part Number
BF246A
Description
IC AMP RF N-CH 30V TO-92
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of BF246A

Current - Drain (idss) @ Vds (vgs=0)
30mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
600mV @ 100nA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
625 mW
Gate-source Breakdown Voltage
- 30 V
Drain Current (idss At Vgs=0)
2 mA to 9 mA
Forward Transconductance Gfs (max / Min)
0.008 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
39 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
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BF246A
Manufacturer:
PHILIPS
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44
Part Number:
BF246A
Manufacturer:
FAIRCHILD
Quantity:
5 000
Part Number:
BF246A
Manufacturer:
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www.fairchildsemi.com
Small Signal Transistors – Darlington Transistors (Continued)
KSP14
MPSA13
MPSA14
BC517
KSP25
2N5307
2N5308
2N6427
2N6426
BSR50
KSP26
KSP27
MPSA27
MPSA28
MPSA29
2N7051
2N7052
TO-92 PNP Configuration
MPSA77
KSP62
KSP63
KSP64
BC516
MPSA63
MPSA64
MPSA65
KSP75
KSP76
KSP77
Products
V
CEO
100
100
100
30
30
30
40
40
40
40
40
40
45
50
60
60
80
20
30
30
30
30
30
30
40
50
60
(V)
V
CBO
100
100
100
30
30
30
30
40
40
40
40
40
60
50
60
60
80
60
20
30
30
40
30
30
30
40
50
60
(V)
V
EBO
10
10
10
10
10
12
12
12
12
10
10
10
12
12
12
12
10
10
10
10
10
10
10
10
10
10
10
5
(V)
Max (A)
0.5
1.2
1.2
0.5
1.2
1.2
1.2
1.2
0.5
0.5
0.8
0.8
0.8
1.5
1.5
1.2
0.5
0.5
0.5
1.2
1.2
1.2
0.5
0.5
0.5
I
1
C
20000
10000
20000
30000
10000
20000
30000
10000
10000
10000
10000
10000
10000
20000
10000
20000
30000
10000
20000
20000
10000
10000
10000
7000
1000
1000
2000
1000
Min
2-93
Discrete Power Products –
200000
300000
20000
70000
20000
20000
Max
h
FE
@V
10
CE
5
5
5
2
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
5
5
5
5
5
5
(V) @I
1000
1000
C
100
100
100
100
100
100
150
100
100
100
100
100
100
100
100
100
100
100
100
100
100
20
10
20
2
2
(mA)
Bipolar Transistors and JFETs
Max (V)
1.5
1.5
1.5
1.5
1.4
1.4
1.5
1.5
1.3
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1
1
1
@I
V
CE (sat)
C
100
100
100
100
100
200
200
500
500
500
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
10
(mA) @I
0.01
B
0.1
0.1
0.1
0.1
0.2
0.2
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
10
10
(mA)

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