BF246A Fairchild Semiconductor, BF246A Datasheet - Page 97

• Manufacturer Part Number: BF246A
• Description: IC AMP RF N-CH 30V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BF246A

• Current - Drain (idss) @ Vds (vgs=0): 30mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 600mV @ 100nA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 350mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 30 V
• Drain Current (idss At Vgs=0): 2 mA to 9 mA
• Forward Transconductance Gfs (max / Min): 0.008 S
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 39 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SOT-223 NPN Configuration
PZTA29
PZTA27
NZT605
PZTA14
BSP50
BSP51
BSP52
PZTA28
NZT7053
SOT-223 PNP Configuration
PZTA64
SOT-23 NPN Configuration
KST13
KST14
MMBTA13
BCV27
MMBTA14
MMBT6427
SOT-23 PNP Configuration
KST63
KST64
MMBTA63
BCV26
MMBTA64
SuperSOT NPN Configuration
MMBTA28
TO-226 NPN Configuration
TN6725A
2N7053
TO-92 NPN Configuration
KSP12
MPSA12
2N5306
KSP13
Products
V
CEO
100
100
11
30
45
60
80
80
30
30
30
30
30
30
40
30
30
30
30
30
80
50
20
20
25
30
–
–
(V)
V
CBO
100
140
100
100
60
30
60
80
90
80
30
30
30
30
40
30
40
30
30
30
40
30
80
60
20
20
25
30
(V)
V
EBO
12
10
10
10
12
12
10
10
10
10
10
10
12
10
10
10
10
10
12
12
12
10
10
12
10
5
5
5
(V)
Max (A)
0.8
1.5
1.2
0.8
0.8
0.8
1.5
1.2
0.3
0.3
1.2
1.2
1.2
1.2
0.5
0.5
1.2
1.2
1.2
0.8
1.2
1.5
1.2
1.2
0.5
I
–
–
–
C
10000
10000
20000
10000
20000
10000
20000
10000
20000
20000
20000
10000
20000
10000
20000
20000
10000
20000
20000
10000
5000
2000
2000
2000
1000
1000
7000
4000
Min
2-92
Discrete Power Products –
200000
20000
40000
20000
70000
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
10
10
10
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V) @I
1000
1000
1000
C
100
100
500
100
500
500
500
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
10
10
2
(mA)
Bipolar Transistors and JFETs
Max (V)
1.5
1.5
1.5
1.5
1.3
1.3
1.3
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.4
1.5
1
1
1
1
V
@I
CE (sat)
1000
1000
C
100
100
100
500
500
500
100
100
100
100
100
100
100
100
500
100
100
100
100
100
100
100
200
100
10
10
(mA) @I
0.01
0.01
B
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.2
0.1
0.1
0.1
0.1
0.1
0.5
0.1
0.1
0.1
0.1
0.1
50
50
50
1
2
(mA)