BF246A Fairchild Semiconductor, BF246A Datasheet - Page 111

• Manufacturer Part Number: BF246A
• Description: IC AMP RF N-CH 30V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BF246A

• Current - Drain (idss) @ Vds (vgs=0): 30mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 600mV @ 100nA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 350mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 30 V
• Drain Current (idss At Vgs=0): 2 mA to 9 mA
• Forward Transconductance Gfs (max / Min): 0.008 S
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 39 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Small Signal Transistors – General Purpose Transistors (Continued)
2N3393
2N5172
2N3415
PN3565
KSC2001
BC338
SS8050
MPS6513
PN2222
SS9011
KSC839
2N5088
BC183
BC183C
BC183LC
BC548
BC549
2N4123
BC184LC
PN3643
2N3704
BC184
BC184C
BC184L
PN3566
PN4141
2N4953
KSD471A
KSC2328A
MPSA20
2N3903
2N3904
TIS97
PN3569
PN3567
Products
V
CEO
25
25
25
25
25
25
25
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
40
40
40
40
40
40
(V)
V
CBO
25
25
25
30
30
30
40
40
60
50
35
35
45
45
45
30
30
40
45
60
50
45
45
45
40
60
60
40
30
60
60
40
80
80
–
(V)
V
EBO
5
5
5
6
5
5
6
4
5
5
4
4
5
6
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
4
6
6
6
5
5
(V)
Max (A)
0.03
0.5
0.5
0.5
0.5
0.7
0.8
1.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.2
0.2
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.5
0.5
0.6
I
–
–
1
1
2
–
C
Min
100
180
150
100
100
300
120
100
110
110
250
100
100
130
250
130
150
100
200
120
100
100
250
100
90
90
85
90
28
40
80
50
40
50
40
2-106
Discrete Power Products –
Max
180
500
540
600
400
630
300
180
300
198
400
900
800
850
800
800
150
300
300
800
600
300
600
400
320
400
150
300
700
300
120
–
–
–
–
h
FE
@V
4.5
4.5
10
10
10
10
12
10
10
10
10
10
CE
1
1
1
5
5
5
5
5
5
5
1
5
5
5
5
5
1
2
1
1
5
1
1
(V) @I
C
100
100
100
150
100
150
150
150
100
500
150
150
0.1
0.1
10
50
10
10
10
2
2
1
2
1
2
2
2
2
2
2
2
2
2
2
5
(mA)
Bipolar Transistors and JFETs
Max (V)
0.25
0.35
0.22
0.25
0.25
0.25
0.3
0.6
0.7
0.5
0.5
1.6
0.3
0.4
0.5
0.6
0.6
0.6
0.6
0.6
0.3
0.6
0.6
0.6
0.6
0.6
1.6
0.3
0.5
0.3
0.3
–
2
–
1
@I
V
CE (sat)
1000
1500
C
700
500
800
500
100
100
100
100
100
100
150
100
100
100
100
500
150
150
150
10
50
50
10
10
10
50
10
10
50
50
–
1
–
(mA) @I
B
100
0.1
0.5
70
50
80
50
15
10
50
15
30
15
15
–
1
3
5
1
1
1
5
5
5
5
5
5
5
5
5
5
1
5
5
–
(mA)