BF246A Fairchild Semiconductor, BF246A Datasheet - Page 37

IC AMP RF N-CH 30V TO-92

BF246A

Manufacturer Part Number
BF246A
Description
IC AMP RF N-CH 30V TO-92
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of BF246A

Current - Drain (idss) @ Vds (vgs=0)
30mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
600mV @ 100nA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
625 mW
Gate-source Breakdown Voltage
- 30 V
Drain Current (idss At Vgs=0)
2 mA to 9 mA
Forward Transconductance Gfs (max / Min)
0.008 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
39 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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TO-252 (DPAK) (Continued)
HUFA76609D3S
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FQD13N10L
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FQD7N10L
IRFR110A
FDD2572
FDD2582
FDD2570
HUF75829D3S
FDD120AN15A0
FQD16N15
FQD14N15
FDD2512
FQD5N15
IRLR230A
IRLR220A
IRLR210A
FDD2670
FQD18N20V2
HUF75925D3ST
FQD12N20
FQD12N20L
FQD10N20
FQD10N20C
FQD10N20L
FQD630
IRFR230B
FQD7N20
FDD2612
FQD7N20L
IRFR220B
FQD5N20
FQD5N20L
FQD4N20L
IRFR210B
FQD9N25
IRFR234B
FQD8N25
FQD6N25
Products
Min. (V)
BV
100
100
100
100
100
100
150
150
150
150
150
150
150
150
150
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.054
0.066
0.275
10V
0.16
0.18
0.18
0.35
0.08
0.11
0.12
0.16
0.21
0.42
0.13
0.14
0.28
0.28
0.36
0.36
0.36
0.69
0.72
0.75
1.35
0.42
0.45
0.55
0.2
0.4
0.8
0.4
0.4
0.8
1.2
1.2
1.5
1
R
DS(ON)
0.075@6V
0.099@6V
0.38@5V
0.09@6V
0.17@6V
0.47@6V
0.32@5V
0.38@5V
0.78@5V
1.25@5V
0.2@5V
0.4@5V
0.8@5V
1.5@5V
1.4@5V
0.165
4.5V
Max (Ω) @ V
2-32
2.5V
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
Discrete Power Products –
Q
@V
g
Typ. (nC)
11.2
18.6
10.3
13.5
15.5
GS
8.7
4.6
8.5
5.4
6.1
6.8
4.8
7.2
6.6
13
12
16
26
19
39
31
23
18
27
20
32
18
16
20
13
19
22
12
29
12
8
8
8
6
4
= 5V
I
D
11.8
8.4
5.8
4.7
4.7
6.7
4.3
7.5
4.6
2.7
3.6
7.6
7.8
7.6
7.5
5.3
4.9
5.5
4.6
3.8
3.8
3.2
2.7
7.4
6.6
6.2
4.4
10
10
10
29
21
18
14
10
15
11
9
9
7
(A)
MOSFETs
P
D
135
110
100
49
40
40
32
25
20
95
70
65
55
50
42
30
48
33
21
70
83
55
55
51
50
51
46
50
45
42
45
40
37
37
30
26
55
49
50
45
(W)

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