BF246A Fairchild Semiconductor, BF246A Datasheet - Page 119

• Manufacturer Part Number: BF246A
• Description: IC AMP RF N-CH 30V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BF246A

• Current - Drain (idss) @ Vds (vgs=0): 30mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 600mV @ 100nA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 350mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 30 V
• Drain Current (idss At Vgs=0): 2 mA to 9 mA
• Forward Transconductance Gfs (max / Min): 0.008 S
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 39 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Small Signal Transistors – Hybrid Transistors (Continued)
SuperSOT PNP Configuration
FMBS549
FMB3906
FMB857B
FMB200
FMB2907A
FMBA56
Products
V
CEO
30
40
45
45
60
80
(V)
V
CBO
35
40
50
60
60
80
(V)
V
EBO
5
5
5
6
5
4
(V)
Max (A)
0.2
0.1
0.5
0.6
0.5
I
1
C
Min
100
100
220
100
100
100
2-114
Discrete Power Products –
Max
300
300
475
450
300
–
h
FE
@V
10
CE
2
1
5
1
1
(V) @I
C
500
150
100
10
10
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.75
0.25
0.4
0.3
0.4
1.6
@I
V
CE (sat)
2000
C
200
500
100
50
10
(mA) @I
B
200
0.5
20
50
10
5
(mA)