BF246A Fairchild Semiconductor, BF246A Datasheet - Page 121
![IC AMP RF N-CH 30V TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
BF246A
Manufacturer Part Number
BF246A
Description
IC AMP RF N-CH 30V TO-92
Manufacturer
Fairchild Semiconductor
Specifications of BF246A
Current - Drain (idss) @ Vds (vgs=0)
30mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
600mV @ 100nA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
625 mW
Gate-source Breakdown Voltage
- 30 V
Drain Current (idss At Vgs=0)
2 mA to 9 mA
Forward Transconductance Gfs (max / Min)
0.008 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
39 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BF246A
Manufacturer:
PHILIPS
Quantity:
44
Company:
Part Number:
BF246A
Manufacturer:
FAIRCHILD
Quantity:
5 000
Part Number:
BF246A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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Small Signal Transistors – RF Amplifier Transistors (Continued)
KSC388
FPNH10
MPSH10
MPSH11
BF199
KSC1393
KSC838
KSC1675
MPSH24
KSP24
MPSH34
BF240
TO-92 PNP Configuration
MPSH81
TO-92S NPN Configuration
KSC2786
KSC2669
KSC2787
Products
V
CEO
25
25
25
25
25
30
30
30
30
30
40
40
20
20
30
30
(V)
V
CBO
30
30
30
30
40
30
35
50
40
40
40
40
20
30
35
50
(V) V
EBO
4
3
3
3
4
4
4
5
4
4
4
4
3
4
4
5
(V)
Max (A)
0.05
0.05
0.05
0.05
0.05
0.02
0.03
0.05
0.05
0.05
0.05
0.05
0.02
0.03
0.05
0.1
I
C
(MHz)
1100
1100
300
650
650
650
400
100
150
400
400
500
600
400
100
150
f
T
2-116
Discrete Power Products –
Min
60
60
40
40
30
65
60
40
40
20
60
38
40
30
40
40
Max
200
180
240
240
225
240
240
240
–
–
–
–
–
–
–
–
h
@V
FE
12.5
10
10
10
10
10
12
10
10
15
10
10
12
CE
6
6
6
(V) @I
12.5
C
4
4
4
7
2
2
1
8
8
7
1
5
1
2
1
(mA)
Bipolar Transistors and JFETs
Max (V)
0.65
0.2
0.5
0.5
0.5
0.2
0.4
0.3
0.5
0.3
0.4
0.3
–
–
–
–
V
@I
CE (sat)
C
15
10
10
10
10
10
10
–
–
–
–
4
4
4
1
5
(mA) @I
B
1.5
0.4
0.4
0.4
0.5
–
–
–
–
–
5
1
1
1
1
1
(mA)
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