BF246A Fairchild Semiconductor, BF246A Datasheet

IC AMP RF N-CH 30V TO-92

BF246A

Manufacturer Part Number
BF246A
Description
IC AMP RF N-CH 30V TO-92
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of BF246A

Current - Drain (idss) @ Vds (vgs=0)
30mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
600mV @ 100nA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
625 mW
Gate-source Breakdown Voltage
- 30 V
Drain Current (idss At Vgs=0)
2 mA to 9 mA
Forward Transconductance Gfs (max / Min)
0.008 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
39 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF246A
Manufacturer:
PHILIPS
Quantity:
44
Part Number:
BF246A
Manufacturer:
FAIRCHILD
Quantity:
5 000
Part Number:
BF246A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
BF246A Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
BF246A
N-Channel Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process 51.
Absolute Maximum Ratings*
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
V
V
I
T
P
R
R
GF
J
DG
GS
D
θJC
θJA
Symbol
, T
Symbol
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
T
a
=25°C unless otherwise noted
T
Parameter
Parameter
a
=25°C unless otherwise noted
1. Gate 2. Source 3. Drain
1
1
TO-92
-55 ~ +150
Value
Max.
350
125
357
-30
2.8
39
10
September 2007
www.fairchildsemi.com
Units
Units
mW/°C
°C/W
°C/W
mW
mA
°C
V
V

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BF246A Summary of contents

Page 1

... Thermal Characteristics Symbol P Total Device Dissipation D Derate above 25°C R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA © 2007 Fairchild Semiconductor Corporation BF246A Rev. 1.0.0 TO- Gate 2. Source 3. Drain T =25°C unless otherwise noted a Parameter T =25°C unless otherwise noted a Parameter 1 ...

Page 2

... Gate-Source Forward Voltage GS On Characteristics *I Zero-Gate Voltage Drain Current * DSS Small Signal Characteristics g Forward Transferconductance fs * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle = 2% © 2007 Fairchild Semiconductor Corporation BF246A Rev. 1.0.0 T =25°C unless otherwise noted a Test Condition I = 1.0μ 15V, V ...

Page 3

... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation BF246A Rev. 1.0.0 ® Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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