BF246A Fairchild Semiconductor, BF246A Datasheet - Page 18

• Manufacturer Part Number: BF246A
• Description: IC AMP RF N-CH 30V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BF246A

• Current - Drain (idss) @ Vds (vgs=0): 30mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 600mV @ 100nA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 350mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 30 V
• Drain Current (idss At Vgs=0): 2 mA to 9 mA
• Forward Transconductance Gfs (max / Min): 0.008 S
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 39 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SuperSOT™-8
FDR8305N
FDR6580
NDH831N
FDR6674A
FDR4420A
FDR6678A
NDH8321C
FDR8702H
NDH8521C
FDR8508P
NDH8502P
FDR858P
FDR856P
FDR8308P
NDH8304P
NDH8302P
FDR844P
FDR840P
FDR838P
FDR836P
NDH834P
NDH832P
FDR842P
SuperSOT-8 N-Channel
SuperSOT-8 Complementary N- and P-Channel
SuperSOT-8 P-Channel
Products
Min. (V)
20 | -20
20 | -20
30 | -30
BV
-30
-30
-30
-30
-20
-20
-20
-20
-20
-20
-20
-20
-20
-12
20
20
20
30
30
30
DSS
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
0.0085
0.009
0.019
10V
0.02
0.05
–
–
–
–
–
–
–
–
–
–
R
0.038 | 0.08
DS(ON)
0.0095
0.022
0.009
0.013
0.024
0.075
0.028
0.011
0.011
0.017
0.009
4.5V
0.05
0.07
0.06
Max (Ω) @ V
2-13
0.095@2.7V
0.054 | 0.11
0.08@2.7V
0.028
0.014
0.024
0.012
2.5V
0.011
0.016
0.07
–
–
–
–
–
GS
=
Replaced by NDH8304P
Replaced by FDC637AN
Replaced by FDS8928A
Replaced by FDS8958A
Replaced by FDN360P
Replaced by FDR858P
Replaced by FDR838P
Replaced by FDR838P
Bold = New Products (introduced January 2003 or later)
1.8V
0.016
0.02
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
16.2
7 | 6
34
33
23
13
21
13
16
53
41
30
18
57
8
= 5V
3.6 | 2.6
I
D
11.2
11.5
4.5
2.7
7.5
3.2
4.2
11
10
10
11
3
8
8
(A)
MOSFETs
P
D
0.8
1.8
0.8
0.8
1.8
1.8
1.8
1.8
1.8
1.8
0.8
1.8
0.8
1.8
1.8
(W)