BF246A Fairchild Semiconductor, BF246A Datasheet - Page 80

• Manufacturer Part Number: BF246A
• Description: IC AMP RF N-CH 30V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of BF246A

• Current - Drain (idss) @ Vds (vgs=0): 30mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 600mV @ 100nA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 350mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 30 V
• Drain Current (idss At Vgs=0): 2 mA to 9 mA
• Forward Transconductance Gfs (max / Min): 0.008 S
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 39 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Bipolar Power Transistors – Anti-Saturation Transistors
TO-220 NPN Configuration
KSC5302D
KSC5402DT
KSC5603D
KSC5305D
KSC5338D
TO-252(DPAK) NPN Configuration
KSC5502D
TO-263(D
KSC5603D
Products
2
PAK) NPN Configuration
V
CBO
1000
1600
1000
1200
1600
800
800
(V) V
CEO
400
450
800
400
450
600
800
(V) V
EBO
12
12
12
12
12
12
12
(V)
I
C
2
2
3
5
5
2
3
(A)
P
C
100
100
50
30
75
75
50
(W)
Min
20
14
20
22
15
20
6
Max
35
40
35
–
–
–
–
2-75
Discrete Power Products –
h
FE
@I
0.4
0.4
0.4
0.8
0.2
0.4
C
2
(A) @V
CE
1
1
3
1
1
1
3
(V) Typ (V) Max (V) @I
0.25
0.47
0.31
0.5
0.5
–
–
1.25
0.75
1.25
0.4
0.6
0.4
0.8
V
Bipolar Transistors and JFETs
CE
(sat)
0.25
0.25
0.4
0.4
0.8
0.2
C
2
(A) @I
0.025
0.025
0.04
0.04
0.08
0.02
0.4
B
(A)
t
STG
0.175
0.175
0.65
2.2
2
2
2
(µs) t
0.175
F
0.15
0.2
0.2
0.2
0.2
0.2
(µs)