BF246A Fairchild Semiconductor, BF246A Datasheet - Page 122

IC AMP RF N-CH 30V TO-92

BF246A

Manufacturer Part Number
BF246A
Description
IC AMP RF N-CH 30V TO-92
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of BF246A

Current - Drain (idss) @ Vds (vgs=0)
30mA @ 15V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
600mV @ 100nA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Configuration
Single
Transistor Polarity
N-Channel
Power Dissipation
625 mW
Gate-source Breakdown Voltage
- 30 V
Drain Current (idss At Vgs=0)
2 mA to 9 mA
Forward Transconductance Gfs (max / Min)
0.008 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
39 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF246A
Manufacturer:
PHILIPS
Quantity:
44
Part Number:
BF246A
Manufacturer:
FAIRCHILD
Quantity:
5 000
Part Number:
BF246A
Manufacturer:
FAIRCHILD/仙童
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20 000
www.fairchildsemi.com
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Products
BV
(V)
25
20
25
25
25
25
25
25
25
25
25
25
25
30
30
30
30
35
35
35
35
40
40
40
40
40
40
40
40
40
40
40
GDS
Dissipation
Power
(mW)
1000
100
225
225
225
350
225
350
225
225
350
350
350
350
350
225
350
350
350
225
350
350
225
350
225
350
250
350
225
250
350
350
P
D
Min (V)
4.5
0.3
0.5
2.5
0.5
0.5
2.5
0.5
0.3
0.6
1.2
0.8
0.8
1
1
2
4
2
1
2
2
4
1
3
1
1
2
2
2
5
Typ (V) Max (V) @ I
0.6
V
GS
1.5
4.5
6.5
1.5
1.8
2.7
10
10
10
10
3
3
4
4
6
6
6
7
8
3
5
6
3
5
6
3
4
4
5
6
6
7
(off)
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
500
D
1
1
1
1
1
(µA) @ V
2-117
Discrete Power Products –
15
15
15
10
15
15
15
15
10
15
15
20
20
15
20
15
20
10
15
10
20
15
20
10
15
20
20
DS
5
5
5
5
5
(V) Min (mA) Max (mA) @V
0.005
0.15
0.03
0.08
500
0.2
0.9
0.2
12
15
24
25
50
20
10
20
15
30
1
2
4
7
1
8
2
4
5
2
5
5
8
8
0.015
0.35
0.09
0.24
150
100
4.5
I
0.6
15
10
30
20
20
40
60
16
30
75
15
40
80
DSS
5
5
9
1
15
15
15
15
10
15
15
15
15
10
15
15
20
20
15
20
15
15
15
15
20
10
15
10
20
15
20
10
15
20
20
DS
5
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
0.07
0.08
3.5
1.5
4.5
7.5
0.1
10
3
4
6
1
4
7
8
2
GFS
0.21
0.25
0.33
5.5
7.5
12
20
12
12
18
15
6
7
5
8
6
R
(Ω)
100
100
60
30
50
30
60
80
50
30
3
DS
I
0.0001
0.0001
0.0001
0.0002
0.0002
0.0002
D
0.003
0.001
0.001
0.001
(µA)
(off)

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